| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon |
| WANG Hong-Zhe, ZHENG Song-Sheng, CHEN Chao** |
College of Energy, Xiamen University, Xiamen 361005
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| Cite this article: |
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WANG Hong-Zhe, ZHENG Song-Sheng, CHEN Chao 2015 Chin. Phys. Lett. 32 107303 |
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Abstract The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiNx) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiNx passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation.
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Received: 04 May 2015
Published: 30 October 2015
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| PACS: |
73.20.-r
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(Electron states at surfaces and interfaces)
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73.20.At
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(Surface states, band structure, electron density of states)
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[1] Lee J Y and Glunz S W 2006 Sol. Energy Mater. Sol. Cells 90 82
[2] Panek P, Drabczyk K, Focsa A and Slaoui A 2009 Mater. Sci. Eng. B 165 64
[3] Liao B, Stangl R, Mueller T, Lin F, Bhatia C S and Hoex B 2013 J. Appl. Phys. 113 024509
[4] Thomson A F and McIntosh K R 2012 Prog. Photovolt: Res. Appl. 20 343
[5] Wan Y, Bullock J and Cuevas A 2015 Appl. Phys. Lett. 106 201601
[6] M?ckel H and Lüdemann R 2002 J. Appl. Phys. 92 2602
[7] Sharma V, Tracy C, Schroder D, Herasimenka S, Dauksher W and Bowden S 2014 Appl. Phys. Lett. 104 053503
[8] Weber K J and Jin H 2009 Appl. Phys. Lett. 94 063509
[9] Schmidt J and Cuevas A 1999 J. Appl. Phys. 86 3175
[10] Damiani B, Ristow A, Ebong A and Rohatgi A 2002 Prog. Photovolt: Res. Appl. 10 185
[11] Schmidt J and Bothe K 2004 Phys. Rev. B 69 024107
[12] Lim S Y, Rougieux F E and Macdonald D 2013 Appl. Phys. Lett. 103 092105
[13] Kern W and Puotinen D A 1970 RCA Rev. 31 187
[14] Olibet S, Vallat-Sauvain E, Ballif C, Korte L and Fesquet L 2007 The 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes (Vail Cascade Resort, Colorado, USA, 5–8 August 2007)
[15] Dingemans G and Kessels W M M 2012 J. Vac. Sci. Technol. A 30 040802
[16] CV Characterization of MOS Capacitors Using the Model 4200-SCS Semiconductor Characterization System (KEITHLEY Application Note Series, No. 2896)
[17] Paviet-Salomon B, Gall S and Slaoui A 2013 Mater. Sci. Eng. B 178 580
[18] Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
[19] Seo M Y, Cho E N, Kim C E, Moon P and Yun I 2010 The 3rd International Proceedings of the Nanoelectronics Conference (Hong Kong 3–8 January 2010) |
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