| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Wet Chemical Etching of Antimonide-Based Infrared Materials |
| HAO Hong-Yue1,2, XIANG Wei1,2, WANG Guo-Wei1,2, XU Ying-Qiang1,2, REN Zheng-Wei1,2, HAN Xi1,2, HE Zhen-Hong1,2, LIAO Yong-Ping1,2, WEI Si-Hang1,2, NIU Zhi-Chuan1,2** |
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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HAO Hong-Yue, XIANG Wei, WANG Guo-Wei et al 2015 Chin. Phys. Lett. 32 107302 |
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Abstract The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photodiode with the goal of reducing the dark current. The etchant used is based on phosphoric acid (H3PO4), citric acid (C6H8O7) and hydrogen peroxide (H2O2). The roughness of the mesa sidewalls and etching rates are compared and used to find an optimized etchant, with which we obtain optimized mid-wavelength infrared photodiodes possessing an R0A value of 466 Ω?cm2 and a detectivity of 1.43×1011 cm?Hz1/2W?1. Crystallographic orientation selectivity is seen in InAs etching, and also is seen in the InAs/GaSb superlattice wet chemical etching process.
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Received: 16 January 2015
Published: 30 October 2015
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| PACS: |
73.21.Cd
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(Superlattices)
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73.61.Ey
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(III-V semiconductors)
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73.20.At
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(Surface states, band structure, electron density of states)
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