| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD |
| KONG Xiang-Ting1, ZHOU Xu-Liang1, LI Shi-Yan1, QIAO Li-Jun1, LIU Hong-Gang2, WANG Wei1, PAN Jiao-Qing1** |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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| Cite this article: |
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KONG Xiang-Ting, ZHOU Xu-Liang, LI Shi-Yan et al 2015 Chin. Phys. Lett. 32 037301 |
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Abstract We demonstrate high-performance In0.23Ga0.77As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with Ion/Ioffhigh on-current to off-current (Ion/Ioff) ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition (MOCVD). The 2 μm channel-length devices exhibit a peak extrinsic transconductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C–V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5×103 up to approximately 4.32×104 by controlling the etch thickness of In0.49Ga0.51P. The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.
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Published: 26 February 2015
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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71.55.Eq
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(III-V semiconductors)
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77.55.D-
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