CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model |
FANG Yu-Long1,2, FENG Zhi-Hong2**, LI Cheng-Ming1, SONG Xu-Bo2, YIN Jia-Yun2, ZHOU Xing-Ye2, WANG Yuan-Gang2, LV Yuan-Jie2, CAI Shu-Jun2 |
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
|
|
Cite this article: |
FANG Yu-Long, FENG Zhi-Hong, LI Cheng-Ming et al 2015 Chin. Phys. Lett. 32 037202 |
|
|
Abstract We report on the temperature-dependent dc performance of AlGaN/GaN polarization doped field effect transistors (PolFETs). The rough decrements of drain current and transconductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transconductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.
|
|
Published: 26 February 2015
|
|
PACS: |
72.80.Ey
|
(III-V and II-VI semiconductors)
|
|
85.30.Tv
|
(Field effect devices)
|
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
|
|
|
[1] Mohammad S N, Salvador A A and Morkoc H 1995 Proc. IEEE 83 1306 [2] Ji D, Liu B, Lu Y W, Zou M and Fan B L 2012 Chin. Phys. B 21 067201 [3] Huque M A, Eliza S A, Rahman T, Huq H F and Islam S K 2009 Solid-State Electron. 53 341 [4] Lee J W and Webb K J 2004 IEEE Trans. Microwave Theory Tech. 52 2 [5] Li M and Wang Y 2008 IEEE Trans. Electron Devices 55 261 [6] Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H L, Keller S, DenBaars S, Speck J S, Mishra U K and Smorchkova I 2002 Appl. Phys. Lett. 81 4395 [7] Rajan S, Xing H L, DenBaars S, Mishra U K and Jena D 2004 Appl. Phys. Lett. 84 1591 [8] Fang Y L, Feng Z H, Yin J Y, Zhou X Y, Wang Y G, Gu G D, Song X B, Lv Y J, Li C M and Cai S J 2014 IEEE Trans. Electron Devices 61 4084 [9] Tan W S, Uren M J, Fry P W, Houston P A, Balmer R S and Martin T 2006 Solid-State Electron. 50 511 [10] Daumiller I, Kirchner C, Kamp M, Ebeling K J and Kohn E 1999 IEEE Electron Device Lett. 20 448 [11] Rajan S, DenBaars S, Mishra U K, Xing H L and Jena D 2006 Appl. Phys. Lett. 88 042103 [12] Chu R M, Zhou Y G, Liu J, Wang D L, Chen K J and Lau K M 2005 IEEE Trans. Electron Devices 52 438 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|