| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density |
| XING Jun-Liang, ZHANG Yu, LIAO Yong-Ping, WANG Juan, XIANG Wei, XU Ying-Qiang, WANG Guo-Wei, REN Zheng-Wei, NIU Zhi-Chuan** |
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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XING Jun-Liang, ZHANG Yu, LIAO Yong-Ping et al 2014 Chin. Phys. Lett. 31 054204 |
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Abstract GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28 mW, and the threshold current density is 400 A/cm2 under continuous wave operation mode at room temperature.
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Published: 24 April 2014
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