| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G–V Characteristics |
| SHI Yong, MA Zhong-Yuan**, CHEN Kun-Ji, JIANG Xiao-Fan, LI Wei, HUANG Xin-Fan, XU Ling, XU Jun, FENG Duan |
National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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SHI Yong, MA Zhong-Yuan, CHEN Kun-Ji et al 2013 Chin. Phys. Lett. 30 077307 |
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Abstract An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiNx/a-Si/SiO2. There are nc-Si dots isolated by a-Si due to partial crystallization. Conductance-voltage (G–V) measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO2, a-Si related (as-deposited sample) and nc-Si (annealed sample) in a charge trapping/releasing process. Double conductance peaks located in the depletion and weak inversion regions are found in our study. For the as-deposited sample, the Si-sub/SiO2 related G–V peak with weak intensity shifts to the negative as test frequency increases. The a-Si related G–V peak with strong intensity shifts slightly with the increasing frequency. For the annealed sample, little change appears in the intensity and shift of Si-sub/SiO2 related G–V peaks. The position of a-Si/nc-Si related peak is independent of frequency, and its intensity is weaker compared to that of the as-deposited sample. It is also found that as the size of nc-Si becomes larger, the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.
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Received: 18 April 2013
Published: 21 November 2013
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| PACS: |
73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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73.21.La
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(Quantum dots)
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73.20.At
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(Surface states, band structure, electron density of states)
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