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Enhancement of the Neuronal Dynamic Range by Proper Intensities of Channel Noise
WANG Lei, ZHANG Pu-Ming, LIANG Pei-Ji, QIU Yi-Hong
Chin. Phys. Lett. 2013, 30 (7):
070506
.
DOI: 10.1088/0256-307X/30/7/070506
The capability of a biological neuron to discriminate the intensity of external stimulus is measured in its dynamic range. In previous studies, a few factors have been reported to be able to enhance the dynamic range, e.g., electrical coupling and active dendrites. Here we numerically show that intrinsic channel noise within neurons has a subtle effect in neuronal dynamic range modulation. Our simulation results indicate that for relatively weak noise intensity, the dynamic range of the neuron is enhanced significantly. However, as the noise intensity becomes stronger, the dynamic range of the neuron is weakened. Further investigation suggests that sodium channel noise and potassium channel noise play opposite roles in modulating the dynamic range. Consequently, the model results suggest a new function of channel noise, that is, a proper value of noise intensity could optimize the dynamic range of neurons.
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Effect of Electron Initial Longitudinal Velocity on Low-Energy Structure in Above-Threshold Ionization Spectra
WU Ming-Yan, WANG Yan-Lan, LIU Xiao-Jun, LI Wei-Dong, HAO Xiao-Lei, CHEN Jing
Chin. Phys. Lett. 2013, 30 (7):
073202
.
DOI: 10.1088/0256-307X/30/7/073202
Using a semiclassical model, we investigate the effect of the initial longitudinal velocity of the tunnel-ionized electron on low-energy structure (LES) in above-threshold ionization (ATI) spectra. Our analysis shows that the effect (reduction or enhancement) of the initial longitudinal velocity pz0 on the LES is dependent on the direction of the initial longitudinal velocity. For the initial longitudinal velocity along the direction of the laser electric field at the moment of tunneling (i.e., pz0>0), the Coulomb interaction between the photoelectron and ion core is enhanced, while for the initial longitudinal velocity in the opposite direction (i.e., pz0<0), the Coulomb effect is reduced. Our work provides solid evidence that the initial electron longitudinal velocity has considerable effect on the photoelectron dynamics in the ATI process.
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Manipulation of Ions in Microscopic Surface-Electrode Ion Traps
WAN Wei, CHEN Liang, WU Hao-Yu, XIE Yi, ZHOU Fei, FENG Mang
Chin. Phys. Lett. 2013, 30 (7):
073701
.
DOI: 10.1088/0256-307X/30/7/073701
The spatial manipulation of ionic qubits in a fast and precise fashion is one of the foremost issues in scalable quantum information processing with trapped ions. We report our recent efforts toward precise manipulation of trapped ions, including separation, recombination and reordering of the ions, in our home-made microscopic surface-electrode trap. We also demonstrate the micromotion compensation for the trapped ions by rf-photon cross-correlation, which ensures the cooling of the ions down to the temperature 23.3 mK.
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High Power Quasi-Continuous-Wave Diode-End-Pumped Nd:YAG Slab Amplifier at 1319 nm
ZHENG Jian-Kui, BO Yong, XIE Shi-Yong, ZUO Jun-Wei, WANG Peng-Yuan, GUO Ya-Ding, LIU Biao-Long, PENG Qin-Jun, CUI Da-Fu, LEI Wen-Qiang, XU Zu-Yan
Chin. Phys. Lett. 2013, 30 (7):
074202
.
DOI: 10.1088/0256-307X/30/7/074202
We report a high power high beam quality quasi-continuous-wave (QCW) diode-end-pumped Nd:YAG slab amplifier at 1319 nm. The strongest 1064 nm parasitic oscillation has been successfully suppressed by reasonable coating design. In a five-pass configuration, the amplifier yields a 42.3 W linearly polarized 1319 nm output at repetition rate of 1 kHz with pulse duration of 75 μs and beam quality factors of Mx2=1.13 and My2=2.16 in the orthogonal directions. The fluctuation of the amplifier output power is measured to be ±0.6 %. Furthermore, a computational model of QCW pulse amplification is employed to examine the amplification process.
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A Band-Gap Energy Model of the Quaternary Alloy InxGayAl1?x?yN using Modified Simplified Coherent Potential Approximation
ZHAO Chuan-Zhen,ZHANG Rong , LIU Bin, LI Ming, XIU Xiang-Qian, XIE Zi-Li, ZHENG You-Dou
Chin. Phys. Lett. 2013, 30 (7):
076101
.
DOI: 10.1088/0256-307X/30/7/076101
Based on modification of the simplified coherent potential approximation, a model for the band-gap energy of InxGayAl1?x?yN is developed. The parameters of the model are obtained by fitting the experimental band-gap energy of their ternary alloys. It is found that the results agree with the experimental values better than those reported by others, and that the band-gap reduction of InxGayAl1?x?yN with increasing In or Ga content is mainly due to enhanced intraband coupling within the conduction band, and separately within the valence band.
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The Anomalous Temperature Effect on the Ductility of Nanocrystalline Cu Films Adhered to Flexible Substrates
HU Kun, CAO Zhen-Hua, WANG Lei, SHE Qian-Wei, MENG Xiang-Kang
Chin. Phys. Lett. 2013, 30 (7):
076201
.
DOI: 10.1088/0256-307X/30/7/076201
The effect of temperature, T, on the ductility of nanocrystalline (NC) Cu films of different thicknesses on flexible substrates is studied by uniaxial tension. It is found that the NC Cu films will fracture more easily with increasing T, exhibiting the anomalous T effect compared with that of bulk NC metals and freestanding films. Moreover, the T dependence of ductility becomes stronger for thinner films due to the larger decrement of the interfacial strength in thinner films. T-induced softening of the stretchable substrate reduces the interface constraint ability for suppressing strain localization, leading to the anomalous T effect.
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The Material Behavior and Fracture Mechanism of a Frangible Bullet Composite
LI Jian, RONG Ji-Li, ZHANG Yu-Ning, XU Tian-Fu, LI Bin
Chin. Phys. Lett. 2013, 30 (7):
076202
.
DOI: 10.1088/0256-307X/30/7/076202
The quasi-static and dynamic compressive mechanical properties of a bullet composite are investigated using the scattered spot technique, an electronic universal testing machine, and a Split–Hopkinson pressure bar. The stress-strain curves under static and dynamic loading are also obtained, and the strain rate effect is analyzed. The rupture structure is observed under a scanning electron microscope, and the microscopic damage mechanism of the bullet composite is examined. Results show that the composite is sensitive to the strain rate, such that the compressive strength of the composite increases with increased strain rate. The relationship of the compressive strength and elastic modulus with the logarithmic strain rate is nonlinear.
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Harnessing Light and Single Masks to Create Multiple Patterns in a Ternary Blend with Photoinduced Reaction
PAN Jun-Xing, ZHANG Jin-Jun, WANG Bao-Feng, WU Hai-Shun, SUN Min-Na
Chin. Phys. Lett. 2013, 30 (7):
076401
.
DOI: 10.1088/0256-307X/30/7/076401
Using cell dynamics system simulation, we provide a simple way to form differently ordered patterns in a photosensitive, immiscible ABC ternary blend. The first pattern is established by irradiating the sample through a mask, which serves to pin the non-photoactivity C regions and thereby promotes the self-assembly of A and B into ordered domains. When the mask is removed, the photoactivity of the AB blend leads to different periodic patterns. Thus, the use of one mask permits the creation of multiple ordered morphologies, which can be stable for a long time by quenching the system at the appropriate time or choosing a suitable composition ratio and mask shape. Furthermore, the influence on the morphology of the composition ratio, the shape of the mask, and the illumination intensity are studied systematically.
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Partial Order in Potts Models on the Generalized Decorated Square Lattice
QIN Ming-Pu, CHEN Jing, CHEN Qiao-Ni, XIE Zhi-Yuan, KONG Xin, ZHAO Hui-Hai, Bruce Normand, XIANG Tao
Chin. Phys. Lett. 2013, 30 (7):
076402
.
DOI: 10.1088/0256-307X/30/7/076402
We explore the Potts model on the generalized decorated square lattice, with both nearest (J1) and next-nearest (J2) neighbor interactions. Using the tensor renormalization-group method augmented by higher order singular value decompositions, we calculate the spontaneous magnetization of the Potts model with q = 2, 3, and 4. The results for q = 2 allow us to benchmark our numerics using the exact solution. For q = 3, we find a highly degenerate ground state with partial order on a single sublattice, but with vanishing entropy per site, and we obtain the phase diagram as a function of the ratio J2/J1. There is no finite-temperature transition for the q = 4 case when J1 = J2, whereas the magnetic susceptibility diverges as the temperature goes to zero, showing that the model is critical at T = 0.
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A Density Functional Study of the Gold Cages MAu16 (M = Si, Ge, and Sn)
TANG Chun-Mei, ZHU Wei-Hua, ZHANG Ai-Mei, ZHANG Kai-Xiao, LIU Ming-Yi
Chin. Phys. Lett. 2013, 30 (7):
077102
.
DOI: 10.1088/0256-307X/30/7/077102
Relativistic density functional calculations are performed to explore the promise of MAu16(M=Si, Ge, and Sn) clusters as magic clusters and building blocks in developing cluster-assembled materials. C1 and Cs, two isomers of SiAu16, GeAu16 and SnAu16 with M (Ge or Sn) at the center of the cage, named, respectively, as SiAu16–C1, SiAu16–Cs, GeAu16-center, and SnAu16-center, are calculated to be the most stable. The Au–M bond should have both ionic and covalent characteristics. Their static linear polarizabilities and first-order hyperpolarizabilities are found to be sensitive to the delocalization of the valence electrons of the M atom, as well as their structures and shapes.
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Enhanced Performance and Stability in Polymer Photovoltaic Cells Using Ultraviolet-Treated PEDOT:PSS
XU Xue-Jian, YANG Li-Ying, TIAN Hui, QIN Wen-Jing, YIN Shou-Gen, ZHANG Fengling
Chin. Phys. Lett. 2013, 30 (7):
077201
.
DOI: 10.1088/0256-307X/30/7/077201
We investigate the effects of ultraviolet (UV) irradiation treatment with varying irradiation intensities for different treatment times of poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on the performance and stability of polymer solar cells (PSCs) based on regioregular poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend. Ultraviolet-visible transmission spectra, x-ray photoelectron spectroscopy, contact angle measurement, atomic force microscopy and the Kelvin probe method are conducted to characterize the UV-treated PEDOT:PSS film. The results demonstrate that UV treatment can improve the power conversion efficiency (PCE) and stability of PSCs effectively. The best performance is achieved under 1200 μW/cm2 UV treatment for 50 min. Compared to the control device, the optimized device exhibits enhanced performance with a Voc of 0.59 V, Jsc of 12.3 mA/cm2, fill factor of 51%, and PCE of 3.64%, increased by 3.5%, 33%, 8.7% and 50%, respectively. The stability of the PSCs is enhanced by 2.5 times simply through the UV treatment on the PEDOT:PSS buffer layer. The improvement in the device performance and stability is attributed to the improvement in the wettability property and the increase in the work function of the PEDOT:PSS film by UV treatment, while the impact of UV treatment on the transparency of the PEDOT:PSS film is negligible. The strategy of using UV treatment to improve device performance and stability is attractive due to its simplicity, cost-effectiveness, and because it is suitable for large-scale commercial production.
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Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic
QIAN Xin-Ye, CHEN Kun-Ji, HUANG Jian, WANG Yue-Fei, FANG Zhong-Hui, XU Jun, HUANG Xin-Fan
Chin. Phys. Lett. 2013, 30 (7):
077303
.
DOI: 10.1088/0256-307X/30/7/077303
Room-temperature negative differential resistance (NDR) characteristics are observed in a nanocrystalline Si quantum dot (nc-Si QD) floating-gate MOS structure, which is fabricated by plasma-enhanced chemical vapor deposition. Clear multi-NDR peaks for the electrons and holes, shown in the I–V curves, which are significant for the application of multiple value memory and logic, are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate. The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs. Furthermore, low-temperature I–V characteristics are also investigated to confirm the room-temperature results.
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The C–V and G/ω–V Electrical Characteristics of 60Co γ-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures
S. Zeyrek, A. Turan, M. M. Bülbül
Chin. Phys. Lett. 2013, 30 (7):
077306
.
DOI: 10.1088/0256-307X/30/7/077306
The influence of 60Co (γ-ray) irradiation on the electrical characteristics of Al/Si3N4/p-Si (MIS) structures is investigated using capacitance-voltage (C–V) and conductance-voltage (G/ω–V) measurements. The MIS structures are exposed to a 60Co γ radiation source at a dose of 0.7 kGy/h, with a total dose range of 0–100 kGy. The C–V and G/ω–V properties are measured before and after 60Co γ-ray irradiation at 500 kHz and room temperature. It is found that the capacitance and conductance values decrease with the increase in the total dose due to the irradiation-induced defects at the interface. The results also indicate that γ radiation causes an increase in the barrier height ?B, Fermi energy EF and depletion layer width WD. The interface state density (Nss), using the Hill–Coleman method and dependent on radiation dose, is determined from the C–V and G/ω–V measurements and decreases with an increase in the radiation dose. The decrease in the interface states can be attributed to the decrease in the recombination centers and the passivation of the Si surface due to the deposition insulator layer (Si3N4). In addition, it is clear that the acceptor concentration NA decreases with increasing radiation dose. The profile of series resistance Rs for various radiation doses is obtained from forward and reverse-biased C–V and G/ω–V measurements, and its values decrease with increasing radiation dose, while it increases with increasing voltage in the accumulation region
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The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G–V Characteristics
SHI Yong, MA Zhong-Yuan, CHEN Kun-Ji, JIANG Xiao-Fan, LI Wei, HUANG Xin-Fan, XU Ling, XU Jun, FENG Duan
Chin. Phys. Lett. 2013, 30 (7):
077307
.
DOI: 10.1088/0256-307X/30/7/077307
An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiNx/a-Si/SiO2. There are nc-Si dots isolated by a-Si due to partial crystallization. Conductance-voltage (G–V) measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO2, a-Si related (as-deposited sample) and nc-Si (annealed sample) in a charge trapping/releasing process. Double conductance peaks located in the depletion and weak inversion regions are found in our study. For the as-deposited sample, the Si-sub/SiO2 related G–V peak with weak intensity shifts to the negative as test frequency increases. The a-Si related G–V peak with strong intensity shifts slightly with the increasing frequency. For the annealed sample, little change appears in the intensity and shift of Si-sub/SiO2 related G–V peaks. The position of a-Si/nc-Si related peak is independent of frequency, and its intensity is weaker compared to that of the as-deposited sample. It is also found that as the size of nc-Si becomes larger, the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.
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Wafer-Scale Flexible Surface Acoustic Wave Devices Based on an AlN/Si Structure
ZHANG Cang-Hai, YANG Yi, ZHOU Chang-Jian, SHU Yi, TIAN He, WANG Zhe, XUE Qing-Tang, REN Tian-Ling
Chin. Phys. Lett. 2013, 30 (7):
077701
.
DOI: 10.1088/0256-307X/30/7/077701
Wafer-scale flexible surface acoustic wave (SAW) devices based on AlN/silicon structure are demonstrated. The final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvature radius of 8 mm. Measurements under free and bending conditions are carried out, showing that the central frequency shifts little as the curvature changes. SAW devices with central frequency about 191.9 MHz and Q-factor up to 600 are obtained. The flexible technology proposed is directly applied to the wafer silicon substrate in the last step, providing the potential of high performance flexible wafer-scale devices by direct integration with mature CMOS and MEMS technology.
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High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence
WANG Wen-Jie, CHEN Peng, YU Zhi-Guo, LIU Bin, XIE Zi-Li, XIU Xiang-Qian, WU Zhen-Long, XU Feng, XU Zhou, HUA Xue-Mei, ZHAO Hong, HAN Ping, SHI Yi, ZHANG Rong, ZHENG You-Dou
Chin. Phys. Lett. 2013, 30 (7):
078502
.
DOI: 10.1088/0256-307X/30/7/078502
We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well (MQW) nanorod arrays with high internal quantum efficiency. The InGaN/GaN MQWs are grown by metalorganic chemical vapor deposition on c-plane sapphire substrates, and then the MQW nanorod arrays are fabricated by using inductively coupled plasma etching with self-assembled Ni nanoparticle mask with low-damage etching technique. The typical diameter of the nanorods is from 200 nm to 300 nm and the length is around 800 nm, which almost is dislocation free. At room temperature, an enhancement of 3.1 times in total integrated photoluminescence intensity is achieved from the MQW nanorod arrays, in comparison to that of the as-grown MQW structure. Based on the temperature-dependent photoluminescence measurements, the internal quantum efficiency of the nanorod structure is 59.2%, i.e., 1.75 times of as-grown MQW structure (33.8%). Therefore, the nanorod structure with a significant reduction of defects can be a very promising candidate for highly efficient light emitting devices.
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Optimization of Metal Coverage on the Emitter in n-Type Interdigitated Back Contact Solar Cells Using a PC2D Simulation
ZHANG Wei, CHEN Chen, JIA Rui, Janssen G. J. M., ZHANG Dai-Sheng, XING Zhao, Bronsveld P. C. P., Weeber A. W., JIN Zhi, LIU Xin-Yu
Chin. Phys. Lett. 2013, 30 (7):
078801
.
DOI: 10.1088/0256-307X/30/7/078801
In interdigitated back contact (IBC) solar cells, the metal-electrode coverage on a p-type emitter is optimized by a PC2D simulation. The result shows that the variation of the metal coverage ratio (MCR) will affect both the surface passivation and the electrode-contact properties for the p-type emitter in IBC solar cells. We find that when Rc ranges from 0.08 to 0.16Ω?cm2, the MCR is optimized with a value of 25% and 33%, resulting in a highest energy-conversion efficiency. The dependences of both Voc and fill factor on MCR are simulated in order to explore the mechanism of the IBC solar cells.
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69 articles
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