| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells |
| ZHANG Xiao-Fu, LI Yu-Dong, GUO Qi**, LU Wu |
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011
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| Cite this article: |
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ZHANG Xiao-Fu, LI Yu-Dong, GUO Qi et al 2013 Chin. Phys. Lett. 30 076102 |
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Abstract We investigate the photoluminescence (PL) emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation. The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation (2×1013 e/cm2), and then decreases with the cumulative electron dose. Meanwhile, the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high. With respect to the yellow photoluminescence, there is no significant change until the electron fluence has accumulated up to 1014 e/cm2.
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Received: 25 April 2013
Published: 21 November 2013
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| PACS: |
61.80.-x
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(Physical radiation effects, radiation damage)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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78.55.Cr
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(III-V semiconductors)
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78.67.De
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(Quantum wells)
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