| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction |
| DING Bin-Feng** |
Department of Physics and Electronic Information, Langfang Teachers College, Langfang 065000
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DING Bin-Feng 2012 Chin. Phys. Lett. 29 038201 |
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Abstract A ZnO layer with rather good crystalline quality (χmin=9.4%) is grown on a sapphire substrate by plasma enhanced chemical vapor deposition (PECVD). Rutherford backscattering (RBS)/channeling and high-resolution x-ray diffraction (XRD) are used to characterize the elastic strain in the ZnO epilayer. The tetragonal distortion is positive and depth dependent. It is highest near the interface and decreases towards the sample surface. By combining the results of RBS and XRD, the average elastic strains in the parallel and the perpendicular directions can be calculated to be 0.50% and −0.17%, respectively.
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| Keywords:
82.80.Yc
61.85.+p
81.05.Dz
61.10.Nz
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Received: 17 June 2011
Published: 11 March 2012
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| PACS: |
82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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61.85.+p
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(Channeling phenomena (blocking, energy loss, etc.) ?)
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81.05.Dz
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(II-VI semiconductors)
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61.10.Nz
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