|
Effect of Spin-Orbit Interaction and Input State on Quantum Discord and Teleportation of Two-Qubit Heisenberg Systems
QIN Meng, ZHAI Xiao-Yue, CHEN Xuan, LI Yan-Biao, WANG Xiao, BAI Zhong
Chin. Phys. Lett. 2012, 29 (3):
030305
.
DOI: 10.1088/0256-307X/29/3/030305
We study the quantum discord and teleportation of a two-qubit Heisenberg XXX chain with spin-orbit interaction. The analytical expressions of quantum discord, output state quantum discord and fidelity are obtained for this model. The classical correlation, quantum correlation and entanglement of this system depending on coupling interaction, spin-orbit interaction and temperature are investigated in detail. It is found that the quantum discord exists for the ferromagnetic case, but entanglement is zero under the same condition. We can obtain fidelity better than any classical communication protocol for the antiferromagnetic case. The robustness of quantum discord against the temperature is helpful for the realization of quantum computation.
|
|
A Single-Transistor Active Pixel CMOS Image Sensor Architecture
ZHANG Guo-An, ZHANG Dong-Wei, HE Jin, SU Yan-Mei, WANG Cheng, CHEN Qin, LIANG Hai-Lang, YE Yun
Chin. Phys. Lett. 2012, 29 (3):
030702
.
DOI: 10.1088/0256-307X/29/3/030702
A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 µm CMOS AMIS technology.
|
|
Effects of Anomalous Tensor Couplings in Bs0−Bs0 Mixing
CHANG Qin, HAN Lin, YANG Ya-Dong
Chin. Phys. Lett. 2012, 29 (3):
031302
.
DOI: 10.1088/0256-307X/29/3/031302
Motivated by the recently observed anomalous large dimuon charge asymmetry in neutral B decays, we study the effects of the anomalous tensor couplings to pursue a possible solution. With the constraints from the observables φsJ/ψ(φ,f0), asls and ΔMs, the new physics parameter spaces are severely restricted. We find that the contributions induced by the color−singlet or the color-octet tensor operators are helpful to moderate the anomaly in Bs0-Bs0 mixing. Numerically, the observable asls could be enhanced by about two orders of magnitude by the contributions of color−singlet or color-octet tensor operators with their respective nontrivial new weak phase φT1=41°±35° or φT8=−47°±33° and relevant strength parameters |gT1|=(2.89±1.40)×10−2 or |gT8|=(0.79±0.34)×10−2. However, due to the fact that the NP contributions are severely suppressed by the recent LHCb measurement for φsJ/ψ(φ,f0), our theoretical result of asls is still much smaller than the central value of the experimental data.
|
|
Grating-Coupled Waveguide Cloaking
WANG Jia-Fu, QU Shao-Bo, XU Zhuo, MA Hua, WANG Cong-Min, XIA Song, WANG Xin-Hua, ZHOU Hang
Chin. Phys. Lett. 2012, 29 (3):
034101
.
DOI: 10.1088/0256-307X/29/3/034101
Based on the concept of a grating-coupled waveguide (GCW), a new strategy for realizing EM cloaking is presented. Using metallic grating, incident waves are firstly coupled into the effective waveguide and then decoupled into free space behind, enabling EM waves to pass around the obstacle. Phase compensation in the waveguide keeps the wave-front shape behind the obstacle unchanged. Circular, rectangular and triangular cloaks are presented to verify the robustness of the GCW cloaking. Electric field animations and radar cross section (RCS) comparisons convincingly demonstrate the cloaking effect.
|
|
Calculation and Analysis of Near-Field Head-Related Transfer Functions from a Simplified Head-Neck-Torso Model
CHEN Ze-Wei, YU Guang-Zheng, XIE Bo-Sun, GUAN Shan-Qun
Chin. Phys. Lett. 2012, 29 (3):
034302
.
DOI: 10.1088/0256-307X/29/3/034302
To evaluate the overall effect of the neck and torso on the head-related transfer function (HRTF), a simplified head-neck-torso (HNT) model, which consists of a spherical head, spherical torso and cylindrical neck, is proposed and the corresponding HRTFs are calculated using the boundary element method (BEM). The results indicate that the HRTF magnitudes for the HNT model are different from those of the existing spherical head-and-torso model (HAT) above 0.5 kHz, especially in the near-field and contralateral region. The discrepancy in the HRTF magnitudes leads to a discrepancy in the interaural level differences (ILDs) for the HNT and HAT models, which reaches a level of ±10 dB at source distance of 0.2 m. As the source distance increases, the discrepancy in the results of the HNT and HAT models reduces. Measurement on practical HNT and HAT models validates the analysis. Therefore, the neck influences near-field HRTFs and should be included in the near-field HRTF calculation.
|
|
Quasi-monoenergetic Tens-of-MeV Proton Beams by a Laser-Illuminated Funnel-Like Target
BAN Hong-Ye, GU Yan-Jun, KONG Qing, LI Ying-Ying, ZHU Zhen, S. Kawata
Chin. Phys. Lett. 2012, 29 (3):
035202
.
DOI: 10.1088/0256-307X/29/3/035202
From numerical simulations, we study the generation of quasi-monoenergetic MeV proton beams from a laser-illuminated funnel-like target. We show that, when passing through such a target, the laser beam can be focused and constricted within a cylindrical bore at the funnel apex from which proton beams are produced. Accompanied by a much-enhanced laser intensity, the proton beams experience more acceleration time than with normal funnel targets. Constriction from the cylinder bore, combined with an enhancement of a separated charge field from Al electrons, protons can attain higher energies up to several tens of MeV. At the same time, strong suppression of the transverse divergence of the laser and proton beams yields a localized, collimated, mono-energetic proton beam.
|
|
Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation
CUI Jin-Ming, CHEN Xiang-Dong, FAN Le-Le, GONG Zhao-Jun, ZOU Chong-Wen, SUN Fang-Wen, HAN Zheng-Fu, GUO Guang-Can
Chin. Phys. Lett. 2012, 29 (3):
036103
.
DOI: 10.1088/0256-307X/29/3/036103
Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.
|
|
Adsorption, Diffusion, and Dissociation of H2O on Kaolinite (001): a Density Functional Study
HE Man-Chao, ZHAO Jian
Chin. Phys. Lett. 2012, 29 (3):
036801
.
DOI: 10.1088/0256-307X/29/3/036801
Density functional theory is used to investigate the adsorption, diffusion, and dissociation of H2O on kaolinite(001) surface. It is found that the preferred adsorption sites on the kaolinite(001) surface for H2O are the threefold hollow sites with the adsorption energies ranging from 1.06 to 1.15 eV. H2O does not adsorb on the six−fold hollow site of the aluminium(001) face of the third layer of kaolinite, implying that it is difficult for water molecules to penetrate the ideal kaolinite(001) surface. In addition, we calculate the energetic barriers for the diffusion of H2O between the most stable and next most stable adsorption sites, which range from 0.073 to 0.129 eV. The results also show that H2O molecules are easy to diffuse on kaolinite(001) surface. Finally, our study indicates that no dissociation state exists for the H2O on kaolinite(001) surface.
|
|
Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3
WANG Qing-Yan, LI Zhi, ZHANG Wen-Hao, ZHANG Zuo-Cheng, ZHANG Jin-Song, LI Wei, DING Hao, OU Yun-Bo, DENG Peng, CHANG Kai, WEN Jing, SONG Can-Li, HE Ke, JIA Jin-Feng, JI Shuai-Hua, WANG Ya-Yu, WANG Li-Li, CHEN Xi, MA Xu-Cun, XUE Qi-Kun
Chin. Phys. Lett. 2012, 29 (3):
037402
.
DOI: 10.1088/0256-307X/29/3/037402
We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Se-etched SrTiO3(001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.
|
|
Wavelength Dependence of Laser-Induced Bulk Damage Morphology in KDP Crystal: Determination of the Damage Formation Mechanism
HU Guo-Hang, ZHAO Yuan-An, LI Da-Wei, XIAO Qi-Ling
Chin. Phys. Lett. 2012, 29 (3):
037801
.
DOI: 10.1088/0256-307X/29/3/037801
Wet etch process is applied to expose the bulk damage sites in KDP crystals to the surface for the examination by scanning electron microscopy (SEM) and optical microscopy. The damage sites induced by 1064 nm laser consist of three distinct regions: a core, an outer region of modified material, and some oriented cracks. Laser irradiated with 355 nm results in an increase of damage density, a decrease of core diameter and, rarely, occurrence of the crack. Wavelength dependence of the damage feature suggests that a repulsive force exists among the adjacent plasmas, which prevents further expansion of plasma and decreases the size of plasma. The deposited energy absorbed by the smaller plasma may not be able to generate the crack.
|
|
Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method
ZHU Yun, WANG Yue, WAN Peng-Fei, LI Hong-Yu, WANG Shou-Yu
Chin. Phys. Lett. 2012, 29 (3):
038103
.
DOI: 10.1088/0256-307X/29/3/038103
Al-doped ZnO transparent conductive oxide thin films (AZO) are prepared by the magnetron sputtering method. The structural, optical and mechanical properties of the AZO films are studied systematically. The average haze of the AZO sample is increased from 0.34% to 23.6% through wet etching treatment between 380 and 1100 nm, and the etched AZO sample has a higher average transmittance of about 82.3% in infrared wavelength range from 760 to 1100 nm due to the reduction of absorption by carriers. The average hardness and elastic modulus of the as-deposited AZO films, as determined using the nanoindentation technique, are approximately 10.2 GPa and 130 GPa, respectively. The critical fracture load related to the adhesion strength is about 91 mN. The optimized optical and electrical properties and referable mechanical data indicate that AZO films have good prospects for commercial applications.
|
|
An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin
Chin. Phys. Lett. 2012, 29 (3):
038104
.
DOI: 10.1088/0256-307X/29/3/038104
An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 µm CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si−diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond. A cross-point memory selector with a large on/off current ratio is demonstrated, the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state. A low SET programming current of 0.7 mA is achieved and RESET/SET resistance difference of 10000× is obtained.
|
|
Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride
YAN Wei-Xia, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang
Chin. Phys. Lett. 2012, 29 (3):
038301
.
DOI: 10.1088/0256-307X/29/3/038301
Chemical mechanical polishing (CMP) of amorphous Ge2Sb2Te5 (GST) is studied using aqueous solutions of iron trichloride (FeCl3) as possible abrasive-free slurries. The polishing performance of abrasive-free solutions is compared with abrasive-containing (3wt% colloidal silica) slurry in terms of polishing rate and surface quality. The experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface quality. In order to further investigate the polishing mechanism, post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron spectroscopy. Finally, it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.
|
|
Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates
LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan
Chin. Phys. Lett. 2012, 29 (3):
038501
.
DOI: 10.1088/0256-307X/29/3/038501
Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate. Dark-current densities of 7.2×10−7 A/cm2 at 0 V and 3.6×10−4 A/cm2 at −5 V, a high quantum efficiency of 74.4% at 1546 nm, and a 3-dB bandwidth up to 12 GHz are achieved. The full width at half maximum of the detector is about 16 nm. Furthermore, through thermal tuning, the peak wavelength red shifts from 1527 nm to 1544 nm, and a tuning range of 17 nm is realized without fabricating extra tuning electrodes.
|
74 articles
|