| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride |
| YAN Wei-Xia**, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang |
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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ZHONG Min, ZHANG Ze-Fang, YAN Wei-Xia et al 2012 Chin. Phys. Lett. 29 038301 |
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Abstract Chemical mechanical polishing (CMP) of amorphous Ge2Sb2Te5 (GST) is studied using aqueous solutions of iron trichloride (FeCl3) as possible abrasive-free slurries. The polishing performance of abrasive-free solutions is compared with abrasive-containing (3wt% colloidal silica) slurry in terms of polishing rate and surface quality. The experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface quality. In order to further investigate the polishing mechanism, post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron spectroscopy. Finally, it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.
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83.50.jf
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Received: 16 October 2011
Published: 11 March 2012
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| PACS: |
83.50.Jf
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(Extensional flow and combined shear and extension)
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