| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of Substrate Temperature on the Structural, Electrical and Optical Properties of Nanocrystalline Silicon Films in Hot-Filament Chemical Vapor Deposition |
| GUO Xiao-Song, ZHANG Shan-Shan, BAO Zhong, ZHANG Hong-Liang, CHEN Chang-Cheng, LIU Li-Xin, LIU Yan-Xia, XIE Er-Qing**
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Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Physical Science and Technology School, Lanzhou University, Lanzhou 730000
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| Cite this article: |
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GUO Xiao-Song, ZHANG Shan-Shan, BAO Zhong et al 2011 Chin. Phys. Lett. 28 028103 |
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Abstract Hydrogenated nanocrystalline silicon films are deposited onto glass substrates at different substrate temperatures (140–400 °C) by hot−filament chemical vapor deposition. The effect of substrate temperature on the structural properties are investigated. With an increasing substrate temperature, the Raman crystalline volume fraction increases, but decreases with a further increase. The maximum Raman crystalline volume fraction of the nanocrystalline silicon films is about 74% and also has the highest microstructural factor (R=0.89) at a substrate temperature of 250 °C. The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction. The continuous transition of the film structures from columnar to agglomerated is observed at a substrate temperature of 300 °C. The optical band gaps of the grown thin films declines (from 1.89 to 1.53 eV) and dark electrical conductivity increases (from about 10−10 to about 10−6 S/cm) with the increasing substrate temperature.
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| Keywords:
81.07.Bc
81.15.Dj
61.05.cp
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Received: 10 September 2010
Published: 30 January 2011
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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81.15.Dj
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(E-beam and hot filament evaporation deposition)
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61.05.cp
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(X-ray diffraction)
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