| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Orientation and Rate Dependence of Wave Propagation in Shocked Beta-SiC from Atomistic Simulations |
| CHENG Qin, WU Heng-An, WANG Yu, WANG Xiu-Xi |
| CAS Key Laboratory of Materials Behavior and Design, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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CHENG Qin, WU Heng-An, WANG Yu et al 2009 Chin. Phys. Lett. 26 076202 |
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Abstract The orientation dependence of planar wave propagation in beta-SiC is studied via the molecular dynamics (MD) method. Simulations are implemented under impact loadings in four main crystal directions, i.e., <100>, <110>, <111>, and <112>. The dispersion of stress states in different directions increases with rising impact velocity, which implies the anisotropic characteristic of shock wave propagation for beta-SiC materials. We also obtain the Hugoniot relations between the shock wave velocity and the impact velocity, and find that the shock velocity falls into a plateau above a threshold of impact velocity. The shock velocity of the plateaux is dependent on the shock directions, while <111> and <112> can be regarded as equivalent directions as they almost reach the same plateau. A comparison between the atomic stress from MD and the stress from Rankine-Hugoniot jump conditions is also made, and it is found that they agree with each other very well.
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| Keywords:
62.25.-g
62.50.Ef
62.30.+d
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Received: 24 March 2009
Published: 02 July 2009
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| PACS: |
62.25.-g
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(Mechanical properties of nanoscale systems)
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62.50.Ef
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(Shock wave effects in solids and liquids)
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62.30.+d
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(Mechanical and elastic waves; vibrations)
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