| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Crystal Structure and High Hardness Mechanism of Orthorhomic Si2N2O |
| XIONG Lan-Tian1, CAO Mao-Sheng1, HOU Zhi-Ling1 |
| School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 |
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| Cite this article: |
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XIONG Lan-Tian, CAO Mao-Sheng, HOU Zhi-Ling 2009 Chin. Phys. Lett. 26 076201 |
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Abstract A quasi-single-phase orthorombic Si2N2O compound is obtained by hot-pressing sintering using homogeneous precursors as raw materials under nitrogen atmosphere. The bulk hardness of orthorombic Si2N2O (o-Si2N2O) is investigated by a nanoindenter experiment; the results show that o-Si2N2O with maximal value about 19GPa has a high hardness covalent crystal besides β-Si3N4. It is discovered that the high hardness is mainly attributed to the unique crystal structure. The bridging O atoms in the o-Si2N2O are responsible for decreasing hardness. It is found that the Si-O bonds in the open tetrahedral crystal structure are more easily broken and tilted than other bonds.
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| Keywords:
62.20.Qp
61.66.Fn
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Received: 11 April 2009
Published: 02 July 2009
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| PACS: |
62.20.Qp
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(Friction, tribology, and hardness)
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61.66.Fn
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(Inorganic compounds)
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[1] Liu A Y and Cohen M L 1989 Science 245 341
[2] Corkill J L and Cohen M L 1993 Phys. Rev. B 4817622
[3] Teter D M and Hemley R J 1996 Science 271 53
[4] Wang T S, Yu D L, Tian Y J, Xiao F R, He J L, Li D C, WangW K and Li L 2001 Chem. Phys. Lett. 334 7
[5] Knittle E, Kaner P B, Jeanloz R and Cohen M L 1995 Phys. Rev. B 51 12149
[6] SolozhenkoV L, Andrault D, Fiquet G, Mezouar M and RubbicD C 2001 Appl. Phys. Lett. 78 1385
[7] Sun H, Jhi H, Roundy D, Cohen M L and Louie S G 2001 Phys. Rev. B 64 094108
[8] Badzian A R 1988 Appl. Phys. Lett. 53 2495
[9] He D W, Zhao Y S, Daemen L, Qian J, Shen T D and Zerda T W2002 Appl. Phys. Lett. 82 643
[10] Huang F L and Xiang X 2004 Diamond Relat. Mater. 13 1757
[11] Kouvetakis J, Kaner R B, Sattler M L and Bartlett N 1986 J. Chem. Soc. Chem. Commun. 1986 1758
[12] Phillips J C 1970 Rev. Mod. Phys. 42 317
[13] Van Vechten J A 1969 Phys. Rev. 187 1007
[14] Kroll P, Schroter T and Peters M 2005 Angew. Chem.Int. Ed. 44 4249
[15] He J L, Guo L C, Guo X J, Liu R P, Tian Y J, Wang H T andGao C X 2006 Appl. Phys. Lett. 88 101906
[16] Gao F M, He J L, Wu E R, Liu S M, Yu D L, Li D C, Zhang SY and Tian Y J 2003 Phys. Rev. Lett. 91 015502
[17] Guo X J, Li L, Liu Z Y, Yu D L, He J L, Liu R P, Xu B,Tian Y J and Wang H T 2008 J. Appl. Phys. 104 023503
[18] Guo X J, Xu B, He J L, Yu D L, Liu Z Y and Tian Y J 2008 Appl. Phys. Lett. 93 041904
[19] Sun J, Zhou X F, Qian G R, Chen J, Fan Y X, Wang H W, GuoX J, He L J, Liu Z Y and Tian Y J 2006 Appl. Phys. Lett. 89 151911
[20] Liu Z Y, Guo X J, He J L, Yu D L and Tian Y J 2007 Phys. Rev. Lett. 98 109601 |
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