| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Cation Effect on Copper Chemical Mechanical Polishing |
| WANG Liang-Yong1,2, LIU Bo1, SONG Zhi-Tang1, FENG Song-Lin1 |
| 1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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WANG Liang-Yong, LIU Bo, SONG Zhi-Tang et al 2009 Chin. Phys. Lett. 26 028103 |
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Abstract We examine the effect of cations in solutions containing benzotriazole (BTA) and H2O2 on copper chemical mechanical polishing (CMP). On the base of atomic force microscopy (AFM) and material removal rate (MRR) results, it is found that ammonia shows the highest MRR as well as good surface after CMP, while KOH demonstrates the worst performance. These results reveal a mechanism that small molecules with lone-pairs rather than molecules with steric effect and common inorganic cations are better for copper CMP process, which is indirectly confirmed by open circuit potential (OCP).
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| Keywords:
81.65.Ps
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Received: 12 June 2008
Published: 20 January 2009
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| PACS: |
81.65.Ps
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(Polishing, grinding, surface finishing)
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