Various Trap States at SiGe-SiO<SUB>2</SUB> Interface Formed by a Pulsed Laser

doi:10.1088/0256-307X/26/2/026803

Chin. Phys. Lett.

2009, Vol. 26

Issue (2): 026803 DOI: 10.1088/0256-307X/26/2/026803

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Various Trap States at SiGe-SiO₂ Interface Formed by a Pulsed Laser

HUANG Wei-Qi¹, LÜ Quan¹, XU Li², ZHANG Rong-Tao¹, WANG Hai-Xu¹, JIN Feng¹

¹Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025²Department of Physics, Datong University, Datong 730013

Cite this article:

HUANG Wei-Qi, LÜ, Quan et al 2009 Chin. Phys. Lett. 26 026803

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Abstract We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser
irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO₂ interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL
emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.

Keywords: 68.35.-p 61.43.Bn

Received: 14 October 2008 Published: 20 January 2009

PACS:	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)
	61.43.Bn	(Structural modeling: serial-addition models, computer simulation)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/2/026803 OR https://cpl.iphy.ac.cn/Y2009/V26/I2/026803

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	HUANG Wei-Qi
	LÜ
	Quan
	XU Li
	ZHANG Rong-Tao
	WANG Hai-Xu
	JIN Feng

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