CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser |
HUANG Wei-Qi1, LÜ Quan1, XU Li2, ZHANG Rong-Tao1, WANG Hai-Xu1, JIN Feng1 |
1Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 5500252Department of Physics, Datong University, Datong 730013 |
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Cite this article: |
HUANG Wei-Qi, LÜ, Quan et al 2009 Chin. Phys. Lett. 26 026803 |
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Abstract We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
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Keywords:
68.35.-p
61.43.Bn
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Received: 14 October 2008
Published: 20 January 2009
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PACS: |
68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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61.43.Bn
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(Structural modeling: serial-addition models, computer simulation)
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