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Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots |
DOU Xiu-Ming, SUN Bao-Quan, XIONG Yong-Hua, HUANG She-Song, NI
Hai-Qiao, NIU Zhi-Chuan |
| SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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DOU Xiu-Ming, SUN Bao-Quan, XIONG Yong-Hua et al 2008 Chin. Phys. Lett. 25 3440-3443 |
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Abstract We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier--phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.
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| Keywords:
78.55.Cr
78.67.Hc
63.20.Kr
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Received: 26 May 2008
Published: 29 August 2008
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