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Stability Analysis of an Inverted Pendulum Subjected to Combined High Frequency Harmonics and Stochastic Excitations
HUANG Zhi-Long, JIN Xiao-Ling, ZHU Zi-Qi
Chin. Phys. Lett. 2008, 25 (9):
3099-3102
.
Stability of vertical upright position of an inverted pendulum with its suspension point subjected to high frequency harmonics and stochastic excitations is investigated. Two classes of excitations, i.e., combined high frequency harmonic excitation and Gaussian white noise excitation, and high frequency bounded noise excitation, respectively, are considered. Firstly, the terms of high frequency harmonic excitations in the equation of motion of the system can be set equivalent to nonlinear stiffness terms by using the method of direct separation of motions. Then the stochastic averaging method of energy envelope is used to derive the averaged Itô stochastic differential equation for system energy. Finally, the stability with probability 1 of the system is studied by using the largest Lyapunov exponent obtained from the averaged Itô stochastic differential equation. The effects of system parameters on the stability of the system are discussed, and some examples are given to illustrate the efficiency of the proposed procedure.
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Sudden Death, Birth and Stable Entanglement in a Two-Qubit Heisenberg XY Spin Chain
SHAN Chuan-Jia, CHENG Wei-Wen, LIU Tang-Kun, LIU Ji-Bing, WEI Hua
Chin. Phys. Lett. 2008, 25 (9):
3115-3118
.
Taking the decoherence effect due to population relaxation into account, we investigate the entanglement properties for two qubits in the Heisenberg XY interaction and subject to an external magnetic field. It is found that the phenomenon of entanglement sudden death (ESD) as well as sudden birth (ESB) appear during the evolution process for particular initial states. The influence of the external magnetic field and the spin environment on ESD and ESB are addressed in detail. It is shown that the concurrence, a measure of entanglement, can be controlled by tuning the parameters of the spin chain, such as the anisotropic parameter, external magnetic field, and the coupling strength with their environment. In particular, we find that a critical anisotropy constant exists, above which ESB vanishes while ESD appears. It is also notable that stable entanglement, which is independent of different initial states of the qubits, occurs even in the presence of decoherence.
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Soliton Structure of a Higher Order (2+1)-Dimensional Nonlinear Evolution Equation of Barothropic Relaxing Media beneath High-Frequency Perturbations
Bouetou Bouetou Thomas, , Kuetche Kamgang Victor, Timoleon Crepin Kofane,
Chin. Phys. Lett. 2008, 25 (9):
3173-3176
.
From the dynamical equation of barothopic relaxing media beneath pressure perturbations, followed with the reductive perturbative analysis, we derive and investigate the soliton structure of a (2+1)-dimensional nonlinear evolution equation describing high-frequency regime of perturbations. Thus, by means of the Hirota's bilinearization method, we unearth three typical patterns of loop-, cusp- and hump-like shapes depending strongly upon a dissipation parameter.
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Photons from Quark and Hadron Phases in Au + Au Collisions
LONG Jia-Li, HE Ze-Jun, , MA Yu-Gang, GUAN Na-Na
Chin. Phys. Lett. 2008, 25 (9):
3188-3191
.
Based on a relativistic hydrodynamic model describing the evolution of the chemically equilibrating quark--gluon plasma system with finite baryon density in a 3+1-dimensional spacetime, we compute photons from the quark phase, hadronic phase and initial non-thermal contributions. It is found that due to the effects of the initial quark chemical potential, chemical equilibration and rapid expansion of the system, the photon yield of the quark--gluon plasma is strongly suppressed, and photons from hadronic matter and initial non-thermal contributions almost reproduce experimental data.
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Charged Top-Pion Production Associated with a Gluon Jet at the LHC
WANG Xue-Lei, XU Wen-Na, XIAO Zhen-Jun
Chin. Phys. Lett. 2008, 25 (9):
3196-3199
.
The charged top-pions have been predicted by the topcolour-assisted technicolour (TC2) model and the observation of the charged top-pions can be regarded as the robust evidence of the model. We study the charged top-pion and gluon associated production at the LHC, i.e., pp→gIIt+. The cross section of this process can reach tens of pb, even hundreds of pb, and there will be enough gIIt+ events produced at the LHC. Because the gIIt+ production is a flavour-changing (FC) process, the SM background can be greatly depressed. Furthermore, there exists an FC decay mode c¯b for the charged top-pions, and such decay mode can provide us with the typical signals to detect the charged top-pions. Therefore, it is hopeful to find the charged top-pions via the gIIt+ production at the LHC.
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Electronic Transport Properties of (7,0) Semiconducting Carbon Nanotube
SONG Jiu-Xu, YANG Yin-Tang, CHAI Chang-Chun, LIU Hong-Xia, DING Rui-Xue
Chin. Phys. Lett. 2008, 25 (9):
3212-3214
.
Electronic transport properties of a finite (7,0) carbon nanotube (CNT) coupled to Au (111) surfaces are investigated with a fully nonequilibrium Green's functions method combined with the density functional theory. The results show that the coupling effect between the CNT and Au electrode plays an important role in the transport properties, which leads0 to the formation of a high plateau in the transmission spectrum around Fermi energy. In addition, the current-voltage characteristic of the (7,0) CNT coupled to Au electrodes is different from an isolated (7,0) CNT.
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Directly Trapping Atoms in a U-Shaped Magneto-Optical Trap Using a Mini Atom Chip
YAN Hui, , YANG Guo-Qing, , WANG Jin, ZHAN Ming-Sheng,
Chin. Phys. Lett. 2008, 25 (9):
3219-3222
.
We experimentally demonstrate the trapping of 85Rb atoms directly on a chip-size U-shaped magneto-optical trap (U-MOT). The trap includes a U-shaped wire on the chip, two bias magnetic field coils and laser beams. The capture volume of the U-MOT is theoretically calculated, and the trap is experimentally realized. With 2A current applied to the U-shaped wire and 2-Gauss horizontal bias field, more than 2×10^6 atoms are trapped. In contrast with an ordinary mirror-MOT, this U-MOT captures atoms directly from the background, thus the trap size is greatly reduced. Based on this mini trap scheme, it is possible to realize a chip-size atom trap array for quantum information processing.
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Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot
DOU Xiu-Ming, SUN Bao-Quan, CHANG Xiu-Ying, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, NIU Zhi-Chuan
Chin. Phys. Lett. 2008, 25 (9):
3231-3233
.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski--Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80K, the second-order correlation function at zero time delay, g(2)(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
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Observation of Quantum Beating from Two Coupled Parametric Six-Wave Mixing Signals in Rb
ZHU Chang-Jun, HE Jun-Fang, ZHAI Xue-Jun, XUE Bing
Chin. Phys. Lett. 2008, 25 (9):
3242-3245
.
Two processes of coupled difference-frequency axially phase-matched parametric six-wave mixing are carried out in Rb vapour by two-photon excitation using fs laser pulses, and parametric six-wave mixing signals in the infrared and near infrared regime are detected. The infrared parametric six-wave mixing signals are up-converted into the visible spectral range by sum-frequency mixing with the pump laser in a LiIO3 crystal. Moreover, quantum beating at 608cm-1, corresponding to the 7s-5d energy difference in Rb, is observed from the sum-frequency signal at 495nm. As a result, we obtain modulated light signals in the visible, near infrared and infrared spectral ranges, and study the interference between 7s and 5d states of Rb.
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Laser Mode-Dependent Size of Plasma Zones Induced by Femtosecond Laser Pulses in Fused Silica
TANG Shan-Chun, JIANG Hong-Bing, LIU Yi, GONG Qi-Huang
Chin. Phys. Lett. 2008, 25 (9):
3268-3271
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We carry out the numerical simulations of femtosecond laser propagation with TEM00 mode, TEM10 mode and a beam combining both the modes in fused silica. It is found that the transverse size of plasma zones induced by laser pulses with the TEM10 mode is smaller than that induced by the TEM00 mode, while the longitudinal size is almost the same, and the saturated plasma density is higher. The transverse size, the longitudinal size and the ratio of the longitudinal to transverse size, for the beam combining both the modes, all could be reduced at the same time in comparison with the TEM00 mode under the same focusing conditions.
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Funnel-Shaped Arrays of Metal Nano-Cylinders for Nano-Focusing
ZHOU Xiu-Li, FU Yong-Qi, WANG Shi-Yong, PENG An-Jin, CAI Zhong-Heng
Chin. Phys. Lett. 2008, 25 (9):
3296-3299
.
We analyse funnel-shaped arrays of metal nanocylinders that can be potentially used as waveguides for nano-focusing of light. The proposed structures consist of Ag nanocylinders with gradually changed radii and discrete spacing arranged like side-view funnels with different angles. Finite-difference and time-domain simulations demonstrate that the proposed structures with different spacings and funnel angles have versatile light propagation characteristics. These structures can focus the incident Gaussian light beam (200nm at its full width at half maximum) into beam sizes of 10nm, 15nm, and 20nm, respectively, which corresponds to the transmission efficiencies of 38%, 40%, and 80%.
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Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases
XU Cheng, LI Xiao, DONG Hong-Cheng, JIN Yun-Xia, HE Hong-Bo, SHAO Jian-Da, FAN Zheng-Xiu
Chin. Phys. Lett. 2008, 25 (9):
3300-3303
.
Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer (XRD) results. X-ray photoelectron spectroscopy (XPS) analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2O5 film achieves the highest laser induced damage threshold (LIDT) either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.
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Mono-Energetic Proton Beam Acceleration in Laser Foil-Plasma Interactions
YAN Xue-Qing, LIU Bi-Cheng, , HE Zhao-Han, SHENG Zheng-Ming, GUO Zhi-Yu, LU Yuan-Rong, FANG Jia-Xun, CHEN Jia-Erh
Chin. Phys. Lett. 2008, 25 (9):
3330-3333
.
Acceleration of ions from ultrathin foils irradiated by intense circularly polarized laser pulses is investigated using a one-dimensional particle-in-cell code. As a circularly polarized laser wave heats the electrons much less efficiently than the wave of linear polarization, the ion can be synchronously accelerated and bunched by the electrostatic field, thus a monoenergetic and high intensity proton beam can be generated.
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Crystal Structure of β-La2Mo2O9 from First Principles Calculation
HOU Chun-Ju, ZHANG Xu, LIU Chang-Song, WANG Xian-Ping, FANGQian-Feng
Chin. Phys. Lett. 2008, 25 (9):
3342-3345
.
Arrangements of O ions in β-La2Mo2O9 are studied by first principles calculation with two different calculation schemes. All final structure configurations consist of MoO4-tetrahedra, MoO5-hexahedra, LaO8 and LaO7 polyhedra. Molybdenum polyhedra are isolated from each other, lanthanum polyhedra are connected together by sharing O ions. The occupancies of three crystallographic distinct O sites O(1), O(2) and O(3) are 100%, 91.7% and 25%, respectively, consistent with experiments. All configurations are related to each other by one of 12 symmetry operations of P213 space group, suggesting that the structure observed experimentally may be interpreted as a time and spatial average of these local or inherent structures.
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Relationship of Polaron Exchange with Ferromagnetic and Insulator--Metal Transitions in Doped Manganites
CHEN Li-Ping, MA Yu-Bin, SONG Xian-Feng, LIAN Gui-Jun, ZHANG Yan, XIONGGuang-Cheng
Chin. Phys. Lett. 2008, 25 (9):
3381-3384
.
We report the experiment results and data analyses based on a polaron exchange model for La0.7Ca0.3MnO3 and Pr0.7(Sr1-xCax)0.3MnO3 epitaxial thin films. In the polaron exchange model with an energy balance condition, critical temperature of TC for stable ferromagnetic (FM) ordering should depend on 8710; E as kBTC =E0 exp(-ΔE/kBTC), where 8710; E denotes the potential barrier for the exchange polarons to overcome. Using the small polaron hopping model, the resistivity peak temperature TP is a function of the hopping energy Ehop. The dependence of TP on Ehop is similar to the dependence of TC on 8710; E, which reveals that the polaron exchange relates to FM and insulator--metal transitions. The result indicates that the polaron exchange model is a simple way for describing the FM ordering, and is very helpful for understanding of complex doped manganites.
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Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis
WANG Jing-Wei, BIAN Ji-Ming, LIANG Hong-Wei, SUN Jing-Chang, ZHAO Jian-Ze, HU Li-Zhong, LUO Ying-Min, DU Guo-Tong
Chin. Phys. Lett. 2008, 25 (9):
3400-3402
.
The N--Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N-monodoped ZnO films, and the N--Ag codoped low-resistivity p-type ZnO films with the resistivity of 1.05Ω.cm, relatively high carrier concentration of 5.43×1017 cm-3, and Hall mobility of 10.09cm2V-1s-1 are obtained under optimized conditions. This achievement confirms that p-type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.
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Superconductivity in Hole-Doped (Sr1-xKx)Fe2As2
CHEN Gen-Fu, LI Zheng, LI Gang, HU Wan-Zheng, DONG Jing, ZHOU Jun, ZHANG Xiao-Dong, ZHENG Ping, WANG Nan-Lin, LUO Jian-Lin
Chin. Phys. Lett. 2008, 25 (9):
3403-3405
.
A series of layered (Sr1-xKx)Fe2As2 compounds with nominal x=0--0.40 are synthesized by solid state reaction method. Similar to other parent compounds of iron-based pnictide superconductors, pure SrFe2As2 shows a strong resistivity anomaly near 210 K, which was ascribed to the spin-density-wave instability. The anomaly temperature is much higher than those observed in LaOFeAs and BaFe2As2, the two prototype parent compounds with ZrCuSiAs- and ThCr2Si2-type structures. K-doping strongly suppresses this anomaly and induces superconductivity. Like in the case of K-doped BaFe2As2, sharp superconducting transitions at Tc38K is observed. We perform the Hall coefficient measurement, and confirm that the dominant carriers are hole-type. The carrier density is enhanced by a factor of 3 in comparison to F-doped LaOFeAs superconductor.
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Anisotropic Applied Field Dependency of Two Successive Magnetic Transitions in LiCu2O2
ZHENG Ping, LUO Jian-Lin, WU Dong, SU Shao-Kui, LIU Guang-Tong, MAYong-Chang, CHEN Zhao-Jia
Chin. Phys. Lett. 2008, 25 (9):
3406-3409
.
The anisotropy of two successive transitions of the spin-ladder compound LiCu2O2 is studied by the specific heat (C) under magnetic fields with H//c and H // ab (written as Hc and Hab in the following) up to 14T. The peak of specific heat at 24.5K in zero field shifts to lower temperature when the field is increased and the magnitude of the peak is suppressed by the field. On the contrary, the peak of 22.5K shifts to higher temperature, especially at 14T. Its magnitude increases in the field of Hc, whereas it decreases in the field of Hab. We calculate the entropy change between 21K and 63K. The different influence of the spin ordering by fields of different direction is obtained. Our experimental results suggest a mixed state between the long range incommensurate helimagnetic ground state and the higher-T short-range dimer liquid state. The temperature range of mixed state is shrunk with the increasing field. Possible mechanism is discussed.
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Nano-sized Domain Wall Pinning Effects in Dilute Cu-Doped Perovskite LaMn1-xCuxO3 Manganites
GAO Tian, CAO Shi-Xun, ZHANG Jin-Cang, YU Li-Ming, KANG Bao-Juan, YUAN Shu-Juan,
Chin. Phys. Lett. 2008, 25 (9):
3410-3413
.
Magnetic properties of Cu-doped LaMn1-xCuxO3 (x=0.05--0.30) systems are carefully studied in the temperature range of 2--300K. A visible unexpected drop is observed in the ac susceptibility and the zero-field cooled dc magnetization curves for the dilute x≤0.10 near 100K, which depends on the measuring frequency and magnetic field. Measurements on frequency dependence of ac susceptibility, observation of magnetic relaxation, and the existence of critical field indicate that the anomaly can be attributed to the domain wall pinning effects. This is directly proven by the results of ball milled nano-sized powder counterparts compared with the bulk materials.
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Influence of Surface Transition Layers on Phase Transformation and Pyroelectric Properties of Ferroelectric Thin Film
SUN Pu-Nan, LÜ, Tian-Quan, CHEN Hui, CAO Wen-Wu,
Chin. Phys. Lett. 2008, 25 (9):
3422-3425
.
Taking into account surface transition layers (STLs), we study the phase transformation and pyroelectric properties of ferroelectric thin films by employing the transverse Ising model (TIM) in the framework of the mean field approximation. The distribution functions representing the intra-layer and inter-layer couplings between the two nearest neighbour pseudo-spins are introduced to characterize STLs. Compared with the results obtained by the traditional treatments for the thin films using only the single surface transition layer (SSL), it is shown that the STL model reflects a more realistic and comprehensive situation of films. The effects of various parameters on the phase transformation properties have shown that STL can make the Curie temperature of the film higher or lower than that of the corresponding bulk material, and the thickness of STL is a key factor influencing the film properties. For a film with definite thickness, there exists a critical STL thickness at which ferroelectricity will disappear when the intra-layer and inter-layer interactions are weak.
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Laser Molecular Beam Epitaxy of Multilayer Heterostructure SrNb0.05Ti0.95O3/La0.9Sr0.1MnO3 in 10000 Unit-Cell Layers
HUANG Yan-Hong, HE Meng, TIAN Huan-Fang, ZHAO Kun, LÜ, Hui-Bin, JIN Kui-Juan, LI Jian-Qi, YANG Guo-Zhen
Chin. Phys. Lett. 2008, 25 (9):
3426-3428
.
Ten thousands of unit-cell multilayer heterosturctures, [SrNb0.05Ti0.95O3/La0.9Sr0.1MnO3]3 (SNTO/LSMO), have been epitaxial grown on SrTiO3 (001) substrates by laser molecular beam epitaxy. The monitor of in-situ reflection high-energy electron diffraction demonstrates that the heterosturctures are layer-by-layer epitaxial growth. Atomic force microscope observation indicates that the surface of the heterosturcture is atomically smooth. The measurements of cross-sectional low magnification and high-resolution transmission electron microscopy as well as the corresponding selected area electron diffraction reveal that the interfaces are of perfect orientation, and the epitaxial crystalline structure shows the orientation relation of SNTO(001)//LSMO(001), and SNTO[100]//LSMO[100].
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Acoustic Imaging Frequency Dynamics of Ferroelectric Domains by Atomic Force Microscopy
ZHAO Kun-Yu, ZENG Hua-Rong, SONG Hong-Zhang, HUI Sen-Xing, LI Guo-Rongv, YIN Qing-Rui, Kiyoshi Shimamura, Chinna Venkadasamy Kannan, Encarnacion Antonia Garcia Villora, Shunji Takekawa, Kenji Kitamura
Chin. Phys. Lett. 2008, 25 (9):
3429-3432
.
We report the acoustic imaging frequency dynamics of ferroelectric domains by low-frequency acoustic probe microscopy based on the commercial atomic force microscopy. It is found that ferroelectric domain could be firstly visualized at lower frequency down to 0.5kHz by AFM-based acoustic microscopy. The frequency-dependent acoustic signal revealed a strong acoustic response in the frequency range from 7kHz to 10kHz, and reached maximum at 8.1kHz. The acoustic contrast mechanism can be ascribed to the different elastic response of ferroelectric microstructures to local elastic stress fields, which is induced by the acoustic wave transmitting in the sample when the piezoelectric transducer is vibrating and exciting acoustic wave under ac electric fields due to normal piezoelectric effects.
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Mo Back Contact for Flexible Polyimide Substrate Cu(In, Ga)Se2 Thin-Film Solar Cells
ZHANG Li, HE Qing, JIANG Wei-long, LIU Fang-fang, LI Chang-Jian, SUN Yun
Chin. Phys. Lett. 2008, 25 (9):
3452-3454
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A dc magnetic sputtering process is applied to growth of a Mo back contact layer onto the flexible polyimide (PI) and rigid soda-lime glass (SLG) substrates. The structural and electrical properties of the Mo layer coated on the two kinds of substrates are investigated by x-ray diffraction (XRD) and Hall effect measurements. The results show that the Mo layer on SLG indicate more better crystal quality and lower resistivity than that on the PI sheets. In contrast to the SLG substrate, the resistivity of the Mo layer on PI is increased by the vacuum annealing process at the substrate temperature of 450°C under Se atmosphere, which is attributed to the cracked Mo layer induced by the mismatch of the coefficient of thermal expansion between PI and Mo material. The Cu(In,Ga)Se2 (CIGS) solar cells based on the PI and SLG substrates show the best conversion efficiencies of 8.16% and 10.98% (active area, 0.2cm2), respectively. The cell efficiency of flexible CIGS solar cells on PI is limited by its relatively lower fill factor caused by the Mo back contact.
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Probing Field Emission from Boron Carbide Nanowires
TIAN Ji-Fa, BAO Li-Hong, WANG Xing-Jun, HUI Chao, LIU Fei, LI Chen, SHEN Cheng-Min, WANG Zong-Li, GU Chang-Zhi, GAO Hong-Jun
Chin. Phys. Lett. 2008, 25 (9):
3463-3466
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High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.
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Centimetre-Long Single Crystalline ZnO Fibres Prepared by Vapour Transportation
JI Zhen-Guo, HAO Fang, WANG Chao, XI Jun-Hua
Chin. Phys. Lett. 2008, 25 (9):
3467-3469
.
Centimetre-long ZnO fibres are synthesized by vapour transportation via thermal evaporation of ZnO powders. The growth process is carried out in a graphite crucible, in which ZnO powder is loaded as the source material, and a silicon wafer is positioned on the top of the crucible as the growth substrate. During the growth process, the source temperature is kept at 800°C, and the substrate temperature is kept at 600°C. Typical growth time to obtain centimetre-long ZnO fibres is 5-10 hours. Scanning electron microscopy (SEM), x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurement results show that ZnO fibres are single crystalline with high crystalline quality and very low defects concentration.
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Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
PEI Xiao-Jiang, GUO Li-Wei, WANG Yang, WANG Xiao-Hui, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming, WANG Li, Tamai N
Chin. Phys. Lett. 2008, 25 (9):
3470-3473
.
Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) is observed at temperature higher than about 100K, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling.
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Electrical Conductivity and Current--Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires
LONG Yun-Ze, DUVAIL Jean-Luc, CHEN Zhao-Jia, JIN Ai-Zi, GU Chang-Zhi
Chin. Phys. Lett. 2008, 25 (9):
3474-3477
.
We report the current--voltage (I-V) characteristics and electrical conductivity of individual template-synthesized poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires (190±6 nm in diameter and σRT= 11.2±2,Ω-1cm-1) over a wide temperature range from 300 to 10K. With lowering temperature, the I-V characteristics become nonlinear around 50K, and a clear Coulomb gap-like structure appears in the differential conductance (dI/dV) spectra. The temperature dependence of the resistance below 70K follows ln R ∝ T1/2, which can be interpreted as Efros--Shklovskii hopping conduction in the presence of a Coulomb gap. In addition, the influences of measurement methods such as the applied bias voltage magnitude, the two-probe and four-probe techniques used in the resistance measurements are also reported and discussed.
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Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes
ZHU Ji-Hong, ZHANG Shu-Ming, SUN Xian, ZHAO De-Gang, ZHU Jian-Jun, LIU Zong-Shun, JIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, YANG Hui,
Chin. Phys. Lett. 2008, 25 (9):
3485-3488
.
InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
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113 articles
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