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Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors |
| REN Jun-Feng, XIU Ming-Xia |
| College of Physics and Electronics, Shandong Normal University, Jinan 250014 |
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| Cite this article: |
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REN Jun-Feng, XIU Ming-Xia 2008 Chin. Phys. Lett. 25 2618-2621 |
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Abstract Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interfacial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.
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| Keywords:
72.25.Hg
85.75.-d
75.25.+z
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Received: 06 April 2008
Published: 26 June 2008
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| PACS: |
72.25.Hg
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(Electrical injection of spin polarized carriers)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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75.25.+z
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