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Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO_2 |
| XIE Zi-Li1, ZHANG Rong1, HAN Ping1, ZHOU Sheng-Ming2, LIU Bin1,XIU Xiang-Qian1, CHEN Peng1, SHI Yi1, ZHENG You-Dou1 |
| 1Department of Physics, Nanjing University, Nanjing 210093 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 2100932Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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XIE Zi-Li, ZHANG Rong, HAN Ping et al 2008 Chin. Phys. Lett. 25 2614-2617 |
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Abstract We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a γ-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10×10μm2 by AFM scan area. The XRD spectra show that the materials grown on γ-LiAlO2 (100) have <1-100> m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown onthe γ-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on oltage of 1--3V.
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| Keywords:
71.20.Nr
71.55.Eq
73.21.Fg
78.67.De
85.35.Be
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Received: 05 November 2007
Published: 26 June 2008
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