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Defect-Related Photoresponse and Polarization-Sensitive Photodetection of Single ZnO Nanowires |
| LIAO Zhi-Min1, XU Jun2, ZHANG Jing-Min2, YU Da-Peng 1,2 |
| 1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 1008712Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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LIAO Zhi-Min, XU Jun, ZHANG Jing-Min et al 2008 Chin. Phys. Lett. 25 2622-2624 |
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Abstract Defect-related photoconductivity of single ZnO nanowires is investigated. The photoconductivity shows power-law dependence with incident green laser intensity due to the defect mechanisms including both recombination centres and traps. The device based on single ZnO nanowire shows a sensitive photoresponse to green light with significant on/off ratios. In addition, the photocurrent is highly sensitive to the polarization of the incident illumination. Therefore, the nanowire may act as apolarized photodetector.
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| Keywords:
72.40.+w
73.63.-b
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Received: 07 March 2008
Published: 26 June 2008
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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