Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO<SUB>2</SUB> Stack

Chin. Phys. Lett.

2008, Vol. 25

Issue (6): 2190-2193 DOI:

Articles

Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO₂ Stack

JIANG Ran;YAO Li-Ting

School of Physics and Microelectronics, Shandong University, Jinan 250100

Cite this article:

JIANG Ran, YAO Li-Ting 2008 Chin. Phys. Lett. 25 2190-2193

Download: PDF(197KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract TiN as gate electrode in Si/HfO₂/TiN/poly-Si stack is evaluated after the postmetal annealing treatments. Interface reactions are investigated using
electron-energy-loss spectroscopy and x-ray photoelectron spectroscopy. The work function of the TiN/poly-Si stack shows strong dependence on the postmetal deposition annealing conditions. The interfacial product in TiN/poly-Si interface is inferred as TiSiN, which is beneficial for the whole high-k stack since TiSiN possesses higher work function compared to TiN and poly-Si.

Keywords: 71.55.Ak 71.70.Gm 77.55.+f

Received: 20 November 2007 Published: 31 May 2008

PACS:	71.55.Ak	(Metals, semimetals, and alloys)
	71.70.Gm	(Exchange interactions)
	77.55.+f

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I6/02190

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	JIANG Ran
	YAO Li-Ting

[1] Muller D A, Sorsch T, Moccio S, Baumann H F, Evans-Lutterodt K andTimp G 1999 Nature 399 758
[2] Lysaght P S, Peterson J J, Foran B, Young C, Bersuker G and Huff HR 2004 Mater. Sci. Semicond. Process. 7 259
[3] Ragnarsson L -A, Pantisano L, Kaushik V, Saito S -I, Shimamoto Y,Gendt S D and Heyns M 2003 Tech. Dig. Int. Electron Devices Meet.p 87
[4] Lu Y K, Zhu W, Chen X F and Gopalkrishnan R 2006 Microelectron. Engin. 83 371
[5] Lemme M C, Efavi J K, Gottlob H D B, Mollenhauer T, Wahlbrink T andKurz H 2005 Microelectron. Reliability 45 953
[6] Park D G, Lim K Y, Cho H J, Cha T H, Yeo I S, Roh J S and Park J W2002 Appl. Phys. Lett. 80 2514
[7] Gu D F, Sandwip K D and Majhi P 2006 Appl. Phys. Lett. 89 082907
[8] Lin Y X, \"Ozt\"urk M C, Se B C, Rhee J, Lee J C and Misra V2005 Appl. Phys. Lett. 87 071903
[9] Cho H J, Lee H L, Park S G, Park H B, Jeon T S, Jin B J et al2004 Tech. Dig. Int. Electron Devices Meet. p 503
[10] Jiang R Xie E Q and Wang Z F 2006 Appl. Phys. Lett. 89142907
[11] Suh Y S, Heuss G, Lee J H and Misra V 2003 IEEEElectron. Devices Lett. 24 439
[12] Luan H, Alshareef H N, Harris H R, Wen H C, Choi K, Senzaki Y,Majhi P and Lee B H 2006 Appl. Phys. Lett. 88 142113

Related articles from Frontiers Journals

[1]	WANG Xiao-Fei,,HU Qiu-Bo,LI Li-Ben,CHEN Qing-Dong,WANG Hui-Xian,. Effect of Annealing Temperature on the Structural and Electrical Properties of a−Axis-Oriented SrTiO₃ Films**[J]. Chin. Phys. Lett., 2012, 29(5): 2190-2193
[2]	CUI Lian, XU Quan, HAN Zhi-You, XU Xu. Size Effects of the Properties in a Ferroelectric Bilayer Film with Surface Transition Layers[J]. Chin. Phys. Lett., 2012, 29(3): 2190-2193
[3]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 2190-2193
[4]	LI Ju-Fen, KUANG Xiao-Yu, . Analysis of Ground-State Zero-Field Splitting for Mn²⁺ in ZnNbOF₅⋅6(H₂O) and CoNbOF₅⋅6(H₂O)**[J]. Chin. Phys. Lett., 2011, 28(6): 2190-2193
[5]	WANG Yong, , YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(5): 2190-2193
[6]	RAO Jian-Ping, OUYANG Chu-Ying, LEI Min-Sheng, JIANG Feng-Yi . Vacancy and H Interactions in Nb**[J]. Chin. Phys. Lett., 2011, 28(12): 2190-2193
[7]	LIU Xiao-Bing, MENG Jian-Wei, JIANG An-Quan, WANG Jian-Lu . Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films**[J]. Chin. Phys. Lett., 2011, 28(10): 2190-2193
[8]	WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing. Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba_0.4Sr _0.6TiO₃ Dielectric[J]. Chin. Phys. Lett., 2010, 27(7): 2190-2193
[9]	LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting, YAN Feng. Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films[J]. Chin. Phys. Lett., 2010, 27(2): 2190-2193
[10]	YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing, XU Sai-Sheng, ZHANG Li-Feng, SHI Yu, DING Shi-Jin, ZHANG Wei. Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition[J]. Chin. Phys. Lett., 2010, 27(2): 2190-2193
[11]	YANG Ling, MA Jing-Jing, ZHU Cheng, HAO Yue, MA Xiao-Hua. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field[J]. Chin. Phys. Lett., 2010, 27(2): 2190-2193
[12]	TIAN Gui-Hua, ZHONG Shu-Quan . A New Model For the Double Well Potential[J]. Chin. Phys. Lett., 2010, 27(10): 2190-2193
[13]	YANG Ling, HAO Yue, ZHOU Xiao-Wei, MA Xiao-Hua. Effects of Different Plasma Energy Treatments on n-Type Al_0.4Ga_0.6N Material[J]. Chin. Phys. Lett., 2009, 26(7): 2190-2193
[14]	JIANG Ran, LI Zi-Feng. Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering[J]. Chin. Phys. Lett., 2009, 26(5): 2190-2193
[15]	YANG Ling, HAO Yue, MA Xiao-Hua, QUAN Si, HU Gui-Zhou, JIANG Shou-Gao, YANG Li-Yuan. Various Recipes of SiN_x Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump[J]. Chin. Phys. Lett., 2009, 26(11): 2190-2193

Viewed

Full text

Abstract