Chin. Phys. Lett.  2008, Vol. 25 Issue (6): 2194-2197    DOI:
Articles |
Spin Splitting in In0.53Ga0.47As/InP Heterostructures
SHANG Li-Yan1;YU Guo-Lin1;LIN Tie1;ZHOU Wen-Zheng1,2;GUO Shao-Ling1;DAI Ning1;CHU Jun-Hao1
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Physicals Science and Technology College, Guangxi University, Nanning 530004
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SHANG Li-Yan, YU Guo-Lin, LIN Tie et al  2008 Chin. Phys. Lett. 25 2194-2197
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Abstract Spin-orbit coupling in a gate-controlled In0.53Ga0.47As/InP quantum well is
investigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47As.
Keywords: 71.70.Ej      71.20.My      73.40.Kp     
Received: 25 February 2008      Published: 31 May 2008
PACS:  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  71.20.My  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I6/02194
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SHANG Li-Yan
YU Guo-Lin
LIN Tie
ZHOU Wen-Zheng
GUO Shao-Ling
DAI Ning
CHU Jun-Hao
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