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Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process |
SUN Bing;LIU Li-Feng;HAN De-Dong;WANG Yi;LIU Xiao-Yan;HAN Ru-Qi,
KANG Jin-Feng |
| Institute of Microelectronics, Peking University, Beijing 100871 |
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SUN Bing, LIU Li-Feng, HAN De-Dong et al 2008 Chin. Phys. Lett. 25 2187-2189 |
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Abstract Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable
filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.
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| Keywords:
71.30.+h
77.55.+f
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Received: 26 February 2008
Published: 31 May 2008
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| PACS: |
71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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77.55.+f
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