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Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy |
CAO Qiang;DENG Jiang-Xia;LIU Guo-Lei;CHEN Yan-Xue;YAN Shi-Shen;MEI
Liang-Mo |
| 1School of Physics and Microelectronics, Shandong University, Jinan 2501002National Key Laboratory of Crystal Materials, Shandong University, Jinan250100 |
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| Cite this article: |
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CAO Qiang, DENG Jiang-Xia, LIU Guo-Lei et al 2007 Chin. Phys. Lett. 24 2951-2954 |
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Abstract High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450°C. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co2+ substituting Zn2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures TC above room temperature.
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| Keywords:
75.50.Pp
68.55.Jk
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Received: 25 May 2007
Published: 20 September 2007
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