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Defect-Bound Carrier Mediated Room-Temperature Ferromagnetism in Co-Doped ZnO Powders |
WEN Qi-Ye1;ZHANG Huai-Wu1;SONG Yuan-Qiang1;YANG Qing-Hui1, John Q.
Xiao2 |
| 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 6100542Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA |
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| Cite this article: |
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WEN Qi-Ye, ZHANG Huai-Wu, SONG Yuan-Qiang et al 2007 Chin. Phys. Lett. 24 2955-2958 |
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Abstract We prepare pure single-phase Co:ZnO powders introducing controllable
interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2μB/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders.
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| Keywords:
75.50.Pp
81.40.Ef
61.72.Ww
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Received: 15 June 2007
Published: 20 September 2007
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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61.72.Ww
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