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Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs/GaAs Single Quantum Well |
| XU Ying-Qiang;ZHANG Wei;NIU Zhi-Chuang;WU Rong-Han;WANG Qi-Ming |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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XU Ying-Qiang, ZHANG Wei, NIU Zhi-Chuang et al 2004 Chin. Phys. Lett. 21 521-523 |
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Abstract Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800°C for 30 s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25 meV and that for the bare region is 0.8 meV. The results can be attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by the SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9 eV and 3.1 eV, respectively.
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| Keywords:
66.30.Hs
71.23.An
78.55.Cr
81.40.Tv
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Published: 01 March 2004
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| PACS: |
66.30.Hs
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71.23.An
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(Theories and models; localized states)
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78.55.Cr
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(III-V semiconductors)
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81.40.Tv
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(Optical and dielectric properties related to treatment conditions)
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