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Electroluminescence from Indium Tin Oxide Film/Nanoscale Si Oxide/p-Si Structure |
| WANG Yong-qiang1;ZHAO Tai-ping1;CUI Xiao-ming1;MA Zhen-chang2;ZONG Wan-hua2;QIN Guo-gang1,3 |
| 1Department of Physics, Peking University, Beijing 100871
2The 13th Institute of Ministry of Electronic Industry, Shijiazhuang 050051
3International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015
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| Cite this article: |
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WANG Yong-qiang, ZHAO Tai-ping, CUI Xiao-ming et al 1999 Chin. Phys. Lett. 16 605-607 |
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Abstract After an Si oxide layer of 3nm thickness had been grown by using magnetron sputtering on a p-type Si (100) substrate, an indium tin oxide (ITO) film was deposited onto the Si oxide layer by using electron beam deposition. Electroluminescence (EL) from such an ITO/Si oxide/p-type Si structure was measured under a forward bias of 5V or more. Its EL power efficiency is about eight times as large as that of a semitransparent Au/Si oxide (3nm)/p-Si structure. The experimental results indicate that the greater EL power efficiency is due not only to the higher optical transparency of the ITO film compared with Au film in a range of 300 to 900nm, but also to some new luminescence centers introduced in the Si oxide layer during the ITO deposition process.
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| Keywords:
78.60.Fi
78.66.Nk
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Published: 01 August 1999
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