| Original Articles |
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Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing |
| ZHANG Tie-chen;YU San;LI Dong-mei;GUO Wei-li;GAO Chun-xiao;ZOU Guang-tian |
| National Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 |
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| Cite this article: |
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ZHANG Tie-chen, YU San, LI Dong-mei et al 1998 Chin. Phys. Lett. 15 70-71 |
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Abstract Micro-grains of wurtzite boron nitride(wBN) crystal have been observed in the region of 5.0-7.0 GPa pressure and 1800-2000 K temperature where cubic boron nitride has been synthesized in the presence of a catalyst. The wBN grain size is about 20-30nm. The presence of these micro-grains indicates that the pressure for wBN growth could be lower than that found in the previous work.
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| Keywords:
78.30.Fs
81.30.-t
81.10.Jt
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Published: 01 January 1998
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| PACS: |
78.30.Fs
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(III-V and II-VI semiconductors)
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81.30.-t
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(Phase diagrams and microstructures developed by solidification and solid-solid phase transformations)
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81.10.Jt
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(Growth from solid phases (including multiphase diffusion and recrystallization))
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