Photoluminescence from Erbium-Implanted Silicon-Rich SiO<suB>2</suB>

Chin. Phys. Lett.

1998, Vol. 15

Issue (1): 72-73 DOI:

Original Articles

Photoluminescence from Erbium-Implanted Silicon-Rich SiO₂

LEI Hong-bing;YANG Qin-qing;ZHU Jia-lian;GAO Jun-hua;WANG Hong-jie;WANG Qi-ming

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

LEI Hong-bing, YANG Qin-qing, ZHU Jia-lian et al 1998 Chin. Phys. Lett. 15 72-73

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Abstract Si-rich SiO₂ films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 ×10¹⁵cm^-2 400 keV Er ions. After annealing at 800°C for 5 min, the samples show room temperature luminescence around 1.54 μm, characteristic of intra-4f emission from Er³⁺, upon excitation using an Ar ion laser.

Keywords: 78.55.Ap 78.55.-m

Published: 01 January 1998

PACS:	78.55.Ap	(Elemental semiconductors)
	78.55.-m	(Photoluminescence, properties and materials)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I1/072

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	LEI Hong-bing
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	WANG Qi-ming

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