| Original Articles |
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Cubic Silicon Carbite Film Growth and Characterization by Hot
Filament Chemical Vapor Deposition
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| SHI Hongtao;ZHANG Rong;ZHENG Youdou;HE Yuliang;LIU Xiangna |
| Department of Physics, Nanjing University, Nanjing 210008 |
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| Cite this article: |
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SHI Hongtao, ZHANG Rong, ZHENG Youdou et al 1994 Chin. Phys. Lett. 11 709-712 |
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Abstract Cubic silicon carbide films (β-Sic) have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C, fulfilled by a two step process. Raman spectrum of the HFCVD-grown β-SiC films shows a characteristic peak at 975 cm-1 with a full width at half maximum (FWHM) of 76cm-1. At room temperature, the films emit visible photoluminescence at 580nm with an FWHM of 0.4eV. X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality.
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| Keywords:
78.20.-e
78.30.-j
78.55.-m
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Published: 01 November 1994
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| PACS: |
78.20.-e
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(Optical properties of bulk materials and thin films)
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78.30.-j
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(Infrared and Raman spectra)
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78.55.-m
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(Photoluminescence, properties and materials)
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