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Photoluminescence Study on InGaAs/InP MQW Structure with F+, Ne+-Implant Induced Compositional Disordering. |
| ZHAO Jie;WANG Yongchen |
| Department of Physics, Tianjin Normal University, Tianjin 300074 |
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| Cite this article: |
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ZHAO Jie, WANG Yongchen 1994 Chin. Phys. Lett. 11 713-716 |
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Abstract A photoluminescence (PL) study on InGaAs/InP multiple-quantum wells (MQW) structure with F+, Ne+ implant induced compositional disordering (I ICD) is presented. The effects of energy shift of PL peak depend on ion dose, annealing conditions, target temperature and implanted ion species. The results indicate that the optimum annealing condition is approximately 750°C for 30s, the ion dose which caused biggest blue shift is around 1 x 1014 cm-2 for room temperature implantation and 5 x 1014 cm-2 for elevated temperature of 200°C implantation. With the same condition of implantation and annealing, F+ and Ne+ implantation induced approximately the same blue shift of PL peak. This result suggests that the radiation enhanced diffusion by neutral ion implantation dominates the IICD processing. The secondary ion mass spectroscopy analysis indicates that the ion implantation caused slightly layer interdiffusion which makes the square potential well smear and results in the band gap blue shift.
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78.55.-m
61.72.Vv
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Published: 01 November 1994
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