Electronic Structures of Wurtzite Compounds GaN, AlN and
Strained-Layer Superlattice (Ga2N2)1(A12N2)1(001)

Chin. Phys. Lett.

1993, Vol. 10

Issue (12): 748-751 DOI:

Original Articles

Electronic Structures of Wurtzite Compounds GaN, AlN and Strained-Layer Superlattice (Ga₂N₂)₁(A1₂N₂)₁(001)

KE Sanhuang;HUANG Meichun;WANG Renzhi

Department of Physics, Xiamen University, Xiamen 361005

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KE Sanhuang, HUANG Meichun, WANG Renzhi 1993 Chin. Phys. Lett. 10 748-751

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Abstract The electronic structures of wurtzite compounds GaN, AlN and strained-layer superlattice (SLS) (Ga₂N₂)₁(A1₂N₂)₁ (001) constituted by straining GaN-layer to match the lattice constant of AlN according to the elastic theory are studied with the first-principles Linearized-Muffin-Tin-Orbitals band-structure method. The band offsets at the SLS are determined by the frozen potential approach. The resutls of the bulk materials are in good agreement with available experimental data.

Keywords: 73.20.Dx 71.25.Tn

Published: 01 December 1993

PACS:	73.20.Dx
	71.25.Tn

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I12/0748

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