Chin. Phys. Lett.  1993, Vol. 10 Issue (12): 748-751    DOI:
Original Articles |
Electronic Structures of Wurtzite Compounds GaN, AlN and Strained-Layer Superlattice (Ga2N2)1(A12N2)1(001)
KE Sanhuang;HUANG Meichun;WANG Renzhi
Department of Physics, Xiamen University, Xiamen 361005
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KE Sanhuang, HUANG Meichun, WANG Renzhi 1993 Chin. Phys. Lett. 10 748-751
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Abstract The electronic structures of wurtzite compounds GaN, AlN and strained-layer superlattice (SLS) (Ga2N2)1(A12N2)1 (001) constituted by straining GaN-layer to match the lattice constant of AlN according to the elastic theory are studied with the first-principles Linearized-Muffin-Tin-Orbitals band-structure method. The band offsets at the SLS are determined by the frozen potential approach. The resutls of the bulk materials are in good agreement with available experimental data.
Keywords: 73.20.Dx      71.25.Tn     
Published: 01 December 1993
PACS:  73.20.Dx  
  71.25.Tn  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1993/V10/I12/0748
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WANG Renzhi
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