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Photoabsorption Spectra of Nano-Crystalline Silicon Films |
LIU Xiangna;HE Yuliang;F. Wang*;R. Schwarz* |
Department of Physics, and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 201800
*Department of Physics El6, T. U. Munich, F. R. Germany
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Cite this article: |
LIU Xiangna, HE Yuliang, F. Wang et al 1993 Chin. Phys. Lett. 10 752-755 |
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Abstract The photoabsorption spectra of nano-crystalline silicon (nc-Si :H) films were measured by means of constant photoconductivity method. We investigated the changes of absorption spectra with the increasing of crystallinity as the deposited films are amorphous, microcrystalline and nano-crystalline. We found that in nc-Si : H the transition processes in the interfacial region between the grains predominate the whole range of the absorption spectra. We related the phenomenon to the structural changes in the material.
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Keywords:
73.50.Pz
72.80.Ng
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Published: 01 December 1993
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PACS: |
73.50.Pz
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(Photoconduction and photovoltaic effects)
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72.80.Ng
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(Disordered solids)
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