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LMTO Study on Band Structure of β-SiC/β-GaN (100) Interface |
| LU Wenchang;ZHANG Kaiming;XIE Xide |
| Department of Physics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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LU Wenchang, ZHANG Kaiming, XIE Xide 1993 Chin. Phys. Lett. 10 744-747 |
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Abstract The linear muffin-tin orbital method and the supercell approach are used to study the band structures of the β-SiC/β-GaN (100) interface within the atomic sphere approximation. It is found that the Si-N, C-Ga bonding configuration is favorable. The band alignment is of type-I with the band gap of the β-GaN completely endosing the band gap of the β-Sic. The localized interface state strongly related to the interface C atoms exists in the original band gap.
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| Keywords:
73.20.At
71.70.Ms
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Published: 01 December 1993
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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71.70.Ms
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