| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Structural Variation and Its Influence on the $1/f$ Noise of a-Si$_{1-x}$Ru$_{x}$ Thin Films Embedded with Nanocrystals |
| Chong Wang1, Hao Zhong1, Eddy Simoen2, Xiang-Dong Jiang3, Ya-Dong Jiang1, Wei Li1** |
1State Key Lab of Electronic Thin Films & Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
2IMEC, Kapeldreef 75, Leuven B-3001, Belgium
3School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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Chong Wang, Hao Zhong, Eddy Simoen et al 2019 Chin. Phys. Lett. 36 028101 |
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Abstract The structural variation and its influence on the $1/f$ noise of a-Si$_{1-x}$Ru$_{x}$ thin films are investigated by Raman spectroscopy, transmission electron microscopy, and low frequency noise measurement. The Ru atoms are introduced into the amorphous silicon thin films by rf magnetron co-sputtering. Ru$_{2}$Si nanocrystals are found in the as-deposited samples. It is shown that the $1/f$ noise of the films can be reduced by a slight doping with Ru atoms. Moreover, both the microstructure and the $1/f$ noise performance of a-Si$_{1-x}$Ru$_{x}$ thin films could be improved through a high-temperature annealing treatment.
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Received: 05 July 2018
Published: 22 January 2019
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| PACS: |
81.05.Gc
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(Amorphous semiconductors)
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68.55.jm
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(Texture)
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68.37.-d
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(Microscopy of surfaces, interfaces, and thin films)
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73.61.-r
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(Electrical properties of specific thin films)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61421002, and the China Scholarship Council under Grant No 201506070075. |
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