| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays |
| Liang-Sen Feng1,2, Zhe Liu1,2**, Ning Zhang1,2, Bin Xue1,2, Jun-Xi Wang1,2**, Jin-Min Li1,2 |
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Liang-Sen Feng, Zhe Liu, Ning Zhang et al 2019 Chin. Phys. Lett. 36 027802 |
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Abstract Dual-color (blue and green) InGaN/GaN nanorod light-emitting diodes (LEDs) with three different nanorod diameters are fabricated. Enhancement of luminescence intensity per area is observed in blue and green wells, to varying degrees. When the diameter is 40 nm, it sharply decreases, which could be explained by the sidewall nonradiative recombination. Time-resolved photoluminescence is conducted to study the carrier lifetime. High recombination rate is observed in nanorod arrays, and is an order of magnitude less than that of the planar LED. When the diameter is 40 nm, the nonradiative lifetime decreases, and this explains the decrease of intensity. The 3D-FDTD simulations show the enhancement of light extraction out of geometry structure by calculating the transmittance of the nanorod arrays.
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Received: 21 November 2018
Published: 22 January 2019
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009, and the National Science and Technology Major Project under Grant No 2017YFB0403803. |
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