| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure |
| GAO Han-Chao**, YIN Zhi-Jun |
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016
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| Cite this article: |
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GAO Han-Chao, YIN Zhi-Jun 2015 Chin. Phys. Lett. 32 068102 |
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Abstract The ground-state energy level (GEL) and electron distribution of GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) are analyzed by a self-consistent solution to the Schr?dinger–Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d2 (d is the channel thickness) by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm2/V?s is achieved.
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Received: 10 November 2014
Published: 30 June 2015
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