Intrinsic Electronic Properties of BN-Encapsulated, van der Waals Contacted MoSe$_{2}$ Field-Effect Transistors

doi:10.1088/0256-307X/40/6/068501

Chin. Phys. Lett.

2023, Vol. 40

Issue (6): 068501 DOI: 10.1088/0256-307X/40/6/068501

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Intrinsic Electronic Properties of BN-Encapsulated, van der Waals Contacted MoSe$_{2}$ Field-Effect Transistors

Yinjiang Shao¹, Jian Zhou¹, Ning Xu¹, Jian Chen¹, Kenji Watanabe², Takashi Taniguchi², Yi Shi¹, and Songlin Li^1*

¹School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
²National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Cite this article:

Yinjiang Shao, Jian Zhou, Ning Xu et al 2023 Chin. Phys. Lett. 40 068501

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Abstract Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_{2}$ field-effect transistors (FETs) that are fully encapsulated in ultraclean hexagonal boron nitride dielectrics and are simultaneously van der Waals contacted with gold electrodes. The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps ($ < $ $10^{10}$ cm$^{-2}$), which lead to outstanding device characteristics at room temperature, including near-Boltzmann-limit subthreshold swings (65 mV/dec), high carrier mobilities (53–68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and negligible scanning hystereses ($ < $ $15$ mV). The dependence of various contact-related parameters with temperature and carrier density is also systematically characterized to understand the van der Waals contacts between gold and MoSe$_{2}$. The results provide insightful information about the device physics in van der Waals contacted and encapsulated 2D FETs.

Received: 28 March 2023 Editors' Suggestion Published: 16 May 2023

PACS:	85.30.Tv	(Field effect devices)
	85.35.-p	(Nanoelectronic devices)
	73.63.-b	(Electronic transport in nanoscale materials and structures)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/40/6/068501 OR https://cpl.iphy.ac.cn/Y2023/V40/I6/068501

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	Yinjiang Shao
	Jian Zhou
	Ning Xu
	Jian Chen
	Kenji Watanabe
	Takashi Taniguchi
	Yi Shi
	and Songlin Li

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