Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
Hao Zhang1,2 , Zhi-Jun Song2 , Jun-Ya Feng2 , Zhong-Qing Ji2** , Li Lu2
1 Department of Physics, Northwest University, Xi'an 7100692 Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract ：Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi$_2$Se$_3$ nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge's empirical relationship, while the noise level is significantly lower than that predicted by Hooge's model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator.
收稿日期: 2016-04-26
出版日期: 2016-08-31
:
73.25.+i
(Surface conductivity and carrier phenomena)
73.63.Nm
(Quantum wires)
72.70.+m
(Noise processes and phenomena)
[1] Moore J E 2010 Nature 464 194 [2] Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045 [3] Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 146802 [4] Fu L et al 2007 Phys. Rev. Lett. 98 106803 [5] Moore J E and Balents L 2007 Phys. Rev. B 75 121306 [6] Balandin A A 2013 Nat. Nanotechnol. 8 549 [7] Hossain M Z et al 2011 ACS Nano 5 2657 [8] Ishigami M et al 2006 Appl. Phys. Lett. 88 203116 [9] Bhattacharyya S et al 2015 ACS Nano 9 12529 [10] Sangwan V K et al 2013 Nano Lett. 13 4351 [11] Persson K M et al 2013 Appl. Phys. Lett. 103 033508 [12] Jang D Y et al 2010 Appl. Phys. Lett. 97 073505 [13] Xia Y et al 2009 Nat. Phys. 5 398 [14] Zhang H et al 2009 Nat. Phys. 5 438 [15] He K, Zhang Y, Chang C Z, Song S L, Wang L L, Chen X, Jia J F, Fang Z, Dai X, Shan W Y, Shen S Q, Niu Q, Qi X L, Zhang S C, Ma X C and Xue Q K 2010 Nat. Phys. 6 584 [16] Hanaguri T, Igarashi K, Kawamura M, Takagi H and Sasagawa T 2010 Phys. Rev. B 82 081305(R) [17] Cheng P, Song C L, Zhang T, Zhang Y Y, Wang Y L, Jia J F, Wang J, Wang Y Y, Zhu B F, Chen X, Ma X C, He K, Wang L L, Dai X, Fang Z, Xie X C, Qi X L, Liu C X, Zhang S C and Xue Q K 2010 Phys. Rev. Lett. 105 076801 [18] Brahlek M, Koirala N, Bansal N and Oh S 2015 Solid State Commun. 215 54 [19] Checkelsky J G, Hor Y S, Cava R J and Ong J 2011 Phys. Rev. Lett. 106 196801 [20] Seinberg H, Laloe J, Fatemi V, Moodera J S and Jarillo-Herrero P 2011 Phys. Rev. B 84 233101 [21] Kim D, Cho S, Butch N P, Syers P, Kirshenbaum K, Adam S, Paglione J and Fuhrer M S 2012 Nat. Phys. 8 460 [22] Wang H C, Liu H W, Chang C Z, Zuo H K, Zhao Y F, Sun Y, Xia Z C, He K, Ma X C, Xie X C, Xue Q K and Wang J 2014 Sci. Rep. 4 5817 [23] Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q and Lu L 2010 Phys. Rev. Lett. 105 176602 [24] Jauregui L A, Pettes M T, Rokhinson L P, Shi L and Chen Y P 2015 Sci. Rep. 5 8452 [25] Yang F, Taskin A A, Sasaki S, Segawa K, Ohno Y, Matsumoto K and Ando Y 2015 ACS Nano 9 4050 [26] Zhang Y, Chang C Z, He K, Wang L L, Chen X, Jia J F, Ma X C and Xue Q K 2010 Appl. Phys. Lett. 97 194102 [27] Hong S S, Cha J J, Kong D, He Ke, Jain J K and Samarth N 2012 Nat. Commun. 3 757 [28] Wang J, DaSilva A M, Chang C Z, Cui Y, Ma X C and Xue Q K 2011 Phys. Rev. B 83 245438 [29] Wang J, Chang C Z, Li H D, He K, Zhang D M, Singh M, Ma X C, Samarth N, Xie M H, Xue Q K and Chan M H 2012 Phys. Rev. B 85 045415 [30] Liu M H, Chang C Z, Zhang Z C, Zhang Y, Ruan W, He K, Wang L L, Chen X, Jia J F, Zhang S C, Xue Q K, Ma X C and Wang Y Y 2011 Phys. Rev. B 83 165440 [31] Analytis J G, McDonald R D, Riggs S C, Chu J H, Boebinger G S and Fisher I R 2010 Nat. Phys. 6 960 [32] Analytis J G, Chu J H, Chen Y L, Corredor F, McDonald R D, Shen Z X and Fisher I R 2010 Phys. Rev. B 81 205407 [33] Qu D X, Hor Y S, Xiong J, Cava R J and Ong N P 2010 Science 329 821 [34] Sacepe B, Oostinga J B, Li J, Ubaldini A, Couto N J G, Giannini E and Morpurgo A F 2011 Nat. Commun. 2 575 [35] Taskin A A, Sasaki S, Segawa K and Ando Y 2012 Phys. Rev. Lett. 109 066803 [36] Tian M L, Ning W, Qu Z, Du H F and Wang J 2013 Sci. Rep. 3 1212 [37] Peng H, Lai K, Kong D S, Meister S, Chen Y L, Qi X L, Zhang S C, Shen Z X and Cui Y 2010 Nat. Mater. 9 225 [38] Hong S S, Zhang Y, Cha J J, Qi X L and Cui Y 2014 Nano Lett. 14 2815 [39] Cho S, Dellabetta B, Zhong R D, Schneelock J, Liu T S, Gu G D, Gilbert M J and Mason N 2015 Nat. Commun. 6 7634 [40] Dutta P and Horn P 1981 Rev. Mod. Phys. 53 497 [41] Hooge F N 1976 Physica B 83 14 [42] Hooge F N 1994 IEEE Trans. Electron Devices 41 1926
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
ZHAO Xiang-Fu**;HAN Ping;ZHANG Rong;ZHENG You-Dou
. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment
[10]
FAN Ping;LIANG Guang-Xing;ZHENG Zhuang-Hao;CAI Xing-Min;ZHANG Dong-Ping. Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition
[11]
SHAO Jia-Feng;A. G. U. Perera;P. V. V. Jayaweera;HE De-Yan. Low-Cost UV-IR Dual Band Detector Using Nonporous ZnO Film Sensitized by PbS Quantum Dots
[12]
MA Hai-Lin;FAN Duo-Wang;. Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2 O3 Nanomaterial by Thermal Evaporation
[13]
GAO Mei-Zhen;ZHANG Feng;LIU Jing;SUN Hui-Na. Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films
[14]
ZHU Shi-Qiu;E. I. RAU;YANG Fu-Hua;ZHENG Hou-Zhi. A Novel Contactless Method for Characterization of Semiconductors: Surface Electron Beam Induced Voltage in Scanning Electron Microscopy
[15]
WANG Chen;BAI Chun-li;LI Xiao-dong;SHANG Guang-yi;QIU Xiao-hui. Roles of Low Energy Electrons in the Fabrication Process Using Scanning Tunnelling Microscope
2016, Vol. 33 
