Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing
Yan-Yan Shen** , Yi-Xin Zhang, Ting Qi, Yu Qiao, Yu-Xin Jia, Hong-Jun Hei, Zhi-Yong He, Sheng-Wang Yu**
Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024
Abstract ：Cu ion implantation and subsequent rapid annealing at 500$^{\circ}\!$C in N$_{2}$ result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm$^{2}$V$^{-1}$S$^{-1}$ for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at $E_{0}=2.6$ V/μm, attaining a current density of 19.5 $\mu$A/cm$^{2}$ at an applied field of 3.5 V/μm. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron microscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
收稿日期: 2016-05-02
出版日期: 2016-08-31
:
81.05.ug
(Diamond)
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
73.25.+i
(Surface conductivity and carrier phenomena)
引用本文:
. [J]. 中国物理快报, 2016, 33(08): 88101-088101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/8/088101
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I08/88101
[1] Yamaguchi H, Masuzawa T, Nozue S, Kudo Y, Saito I, Koe J, Kudo M, Yamada T, Takakuwa Y and Okano K 2009 Phys. Rev. B 80 165321 [2] Lv F X 2003 Physics 32 383 [3] Beloborodov I S, Zapol P, Gruen D M and Curtiss L A 2006 Phys. Rev. B 74 235434 [4] Gruen D M 1999 Annu. Rev. Mater. Sci. 29 211 [5] Sankaran K J, Chen H C, Lee C Y, Tai N H and Lin I N 2012 Appl. Phys. Lett. 101 241604 [6] Birrell J, Gerbi J E, Auciello O, Gibson J M, Gruen D M and Carlisle J A 2003 J. Appl. Phys. 93 5606 [7] Arenal R, Bruno P, Miller D J, Bleuel M, Lal J and Gruen D M 2007 Phys. Rev. B 75 195431 [8] Talapatra S, Cheng J Y, Chakrapani N, Trasobares S, Cao A, Vajtai R, Huang M B and Ajayan P M 2006 Nanotechnology 17 305 [9] Zhu L L 2015 Chin. Phys. B 24 016201 [10] Zhang H, Yang S Y, Liu G P, Wang J X, Jin D D, Li H J, Liu X L, Zhu Q S and Wang Z G 2014 Chin. Phys. B 23 017305 [11] Zeng L, Xin Z, Chen S W, Du G, Kang J F and Liu X Y 2014 Chin. Phys. Lett. 31 027301 [12] Shen Y Y, QiaoY, He Z Y and Yu S W 2015 Mater. Lett. 139 322 [13] Hu X J, Ye J S, Liu H J, Shen Y G, Chen X H and Hu H 2011 J. Appl. Phys. 109 053524 [14] Achatz P, Williams O A, Bruno P, Gruen D M, Garrido J A and Stutzmann M 2006 Phys. Rev. B 74 155429 [15] Wang R Z, Wang B and Yan H 2002 Physics 31 84 [16] Swiatowska J, Lair V, Pereira-Nabais C, Cote G, Marcus P and Chagnes A 2011 Appl. Surf. Sci. 257 9110 [17] Ferrari A C and Robertson J 2000 Phys. Rev. B 61 14095
[1]
.
[2]
.
[3]
.
[4]
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.
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2016, Vol. 33 
