Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application
ZHU Yue-Qin1,2, ZHANG Zhong-Hua2, SONG San-Nian2**, XIE Hua-Qing1, SONG Zhi-Tang2, SHEN Lan-Lan2, LI Le2, WU Liang-Cai2, LIU Bo2
1School of Environmental and Materials Engineering, Shanghai Second Polytechnic University, Shanghai 201209 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract：The phase change material of Ge-doped Sb2Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2Te5. In addition, Ge0.11Sb2Te3 presents extremely rapid reverse switching speed (10 ns), and up to 105 programming cycles are obtained with stable set and reset resistances.
(Semiconductor-device characterization, design, and modeling)
引用本文:
. [J]. 中国物理快报, 2015, 32(07): 77302-077302.
ZHU Yue-Qin, ZHANG Zhong-Hua, SONG San-Nian, XIE Hua-Qing, SONG Zhi-Tang, SHEN Lan-Lan, LI Le, WU Liang-Cai, LIU Bo. Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application. Chin. Phys. Lett., 2015, 32(07): 77302-077302.
2015, Vol. 32 
