A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor
CUI Lei1, WANG Quan1,2, WANG Xiao-Liang1,3**, XIAO Hong-Ling1, WANG Cui-Mei1, JIANG Li-Juan1, FENG Chun1, YIN Hai-Bo1, GONG Jia-Min2, LI Bai-Quan4, WANG Zhan-Guo3
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 4Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036
Abstract：A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (Leff) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate.
. [J]. 中国物理快报, 2015, 32(5): 58501-058501.
CUI Lei, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, JIANG Li-Juan, FENG Chun, YIN Hai-Bo, GONG Jia-Min, LI Bai-Quan, WANG Zhan-Guo. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor. Chin. Phys. Lett., 2015, 32(5): 58501-058501.
2015, Vol. 32 
