Abstract：The electron traps in HfO2 are a major concern of the reliability of metal-oxide-semiconductor field effect transistors (MOSFETs) beyond the 30 nm technology generation. In this work, the principle of the discharge-based pulse I–V technique is demonstrated in detail. By using this technique, the thorough energy distribution of electron traps across the 4 nm HfO2 layer is identified, which overcomes the shortcomings of the current techniques. It is observed that there are two peaks in HfO2. The large peak is at around 1.0 eV below the HfO2 conduction band bottom. The small peak is at about 1.43 eV below the HfO2 conduction band bottom. The results provide valuable information for theoretical modeling establishment, fast material assessment and process optimization for MOSFETs with high-k gate dielectrics.
. [J]. 中国物理快报, 2014, 31(12): 127701-127701.
ZHENG Xue-Feng, FAN Shuang, KANG Di, ZHANG Jian-Kun, CAO Yan-Rong, MA Xiao-Hua, HAO Yue. Electron Trap Energy Distribution in HfO2 by the Discharge-Based Pulse I–V Technique. Chin. Phys. Lett., 2014, 31(12): 127701-127701.
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