摘要A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance. Compared with the conventional ZnO thin-film transistor structure, the novel thin-film transistor has a higher on-state current, steeper sub-threshold characteristics and a lower threshold voltage, owing to the double-gate and high-k dielectric. Based on two-dimensional simulation, the potential channel distribution and the reasons for the improvement in performance are investigated.
Abstract：A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance. Compared with the conventional ZnO thin-film transistor structure, the novel thin-film transistor has a higher on-state current, steeper sub-threshold characteristics and a lower threshold voltage, owing to the double-gate and high-k dielectric. Based on two-dimensional simulation, the potential channel distribution and the reasons for the improvement in performance are investigated.
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2012, Vol. 29 
