中国物理快报  2014, Vol. 31 Issue (06): 68502-068502    DOI: 10.1088/0256-307X/31/6/068502
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
KANG He1, WANG Quan1, XIAO Hong-Ling1, WANG Cui-Mei1, JIANG Li-Juan1, FENG Chun1, CHEN Hong1, YIN Hai-Bo1, WANG Xiao-Liang1,2,3**, WANG Zhan-Guo1,2, HOU Xun3
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083
3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083