KANG He1, WANG Quan1, XIAO Hong-Ling1, WANG Cui-Mei1, JIANG Li-Juan1, FENG Chun1, CHEN Hong1, YIN Hai-Bo1, WANG Xiao-Liang1,2,3**, WANG Zhan-Guo1,2, HOU Xun3
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083 3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083
Abstract：Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20 nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high VBR2/RON,sp value of 194 MW?cm?2.
2014, Vol. 31 
