Simultaneous Formation of AlB<sub>2</sub>-Type and ThSi<sub>2</sub>-Type Nanoislands of Er Silicide by Using a Prepatterned Si(001) Substrate

doi:10.1088/0256-307X/30/9/096801

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Abstract：We report the simultaneous growth of hexagonal AlB₂-phase and tetragonal ThSi₂-phase nanoislands of erbium silicide on the same silicon substrate. As a new technique, the patterned Si(001) surface with pits in a reverse-pyramid shape and {111} sidewalls is taken as the substrate template. The distribution of nanoislands reveals that the upward diffusion over surface steps plays an influential role on the location of islands. Si {111} facets on the pit sidewalls actually provide growth symmetry for the hexagonal islands. This work paves the way for exploring the intrinsic electrical transport properties of metal-semiconductor nanocontacts.

收稿日期: 2013-05-09 出版日期: 2013-11-21

:	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	68.43.Jk	(Diffusion of adsorbates, kinetics of coarsening and aggregation)
	62.23.St	(Complex nanostructures, including patterned or assembled structures)

引用本文:

. [J]. 中国物理快报, 2013, 30(9): 96801-096801.
LIU Bei-Bei, CAI Qun. Simultaneous Formation of AlB₂-Type and ThSi₂-Type Nanoislands of Er Silicide by Using a Prepatterned Si(001) Substrate. Chin. Phys. Lett., 2013, 30(9): 96801-096801.

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https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/9/096801 或 https://cpl.iphy.ac.cn/CN/Y2013/V30/I9/96801

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