Abstract：A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron, sp) is presented. It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI). The oxide trench folds the drift region into a U-shape, resulting in a reduction in cell pitch and Ron, sp. The non-depleted p-island is employed to further reduce Ron, sp by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV). The simulation results show that the p-SOI decreases the Ron, sp to 10.2 mΩ?cm2 from 17.4 mΩ?cm2 of the conventional SOI MOSFET at the same BV.
(High-current and high-voltage technology: power systems; power transmission lines and cables)
引用本文:
. [J]. 中国物理快报, 2013, 30(7): 78501-078501.
FAN Jie, ZHANG Bo, LUO Xiao-Rong, LI Zhao-Ji . A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island. Chin. Phys. Lett., 2013, 30(7): 78501-078501.
2013, Vol. 30 
