The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD
XU Pei-Qiang, JIANG Yang** , MA Zi-Guang, DENG Zhen, LU Tai-Ping, DU Chun-Hua, FANG Yu-Tao, ZUO Peng, CHEN Hong
Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract ：GaN films with different thicknesses of Al composition graded AlGaN buffer are grown on substrates of Si(111) by metal-organic chemical vapor deposition (MOCVD). The thicknesses of graded AlGaN buffer are fixed at 200 nm, 300 nm, and 450 nm, respectively. Optical microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy are employed to characterize these samples. We find that the thickness of the graded AlGaN buffer layer plays a key role on the following growth of GaN films. The optimized thickness of the graded AlGaN buffer layer is 300 nm. Under such conditions, the GaN epitaxial film is crack-free, and its dislocation density is the lowest.
收稿日期: 2012-10-15
出版日期: 2013-03-02
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Ea
(III-V semiconductors)
71.20.Nr
(Semiconductor compounds)
引用本文:
. [J]. Chin. Phys. Lett., 2013, 30(2): 28101-028101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/2/028101
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I2/28101
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2013, Vol. 30 
